IXTR48P20P

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IXTR48P20P is a 45 V N-channel Enhancement Mode Power MOSFET. This device has been developed using CanPAK technology by IXYS Corporation and is optimised for applications such as DC-DC converters, uninterruptible power supplies and other high flicker noise applications. It has a dielectric breakdown voltage rating of 54 V and a maximum drain-source voltage rating of 45 V.

At the heart of the IXTR48P20P is its MOSFET cell array. In its most basic form, MOSFETs are three-terminal devices, with a source, gate, and drain. It has an insulated gate field effect that is used to control its current-carrying capabilities. It works like a switch, with the gate connected to the source and drain. When a voltage is applied to the gate, it creates an electric field which controls the electric current running through the channel. In the case of the IXTR48P20P, when a voltage is applied to the gate, a turning on current (I_gs) flows through the device and causes conduction to start. As the current passes through the channel, it controls the drain current (I_d) which will flow either directly through the channel or will manifest itself in the form of a voltage across the drain.

The IXTR48P20P is particularly well-suited for use in applications with high frequency switching. This is because the IXTR48P20P has a lower gate charge (Q_gs) than other MOSFETs, which reduces switching losses. This allows for faster and more efficient switching, making it a good choice for applications such as DC-DC converters, switching regulators and other high-frequency switching applications. Additionally, the low Q_gs and low gate drive requirements of the IXTR48P20P make it an excellent choice for low-cost, low-power designs.

Due to its low input capacitance, the IXTR48P20P is suitable for use in high speed switching circuits. Additionally, its low on-resistance and low total gate charge makes it desirable for designers looking to reduce power consumption, such as in motor control applications. Overall, the IXTR48P20P is a reliable and efficient MOSFET that can be used for a variety of high power applications.

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