IXTR36P15P

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The IXTR36P15P is a power field-effect transistor (FET) manufactured by IXYS Corporation, with an internally connected drain-source Schottky diode. The device is designed for use in applications requiring the switching and protection of loads operating from a wide range of sources and in situations where incorporation of a protection diode would be undesirable. This article will discuss the IXTR36P15P application field and working principle.The IXTR36P15P is a single power MOSFET with a higher power dissipation level than most MOSFET transistors. If a device with a drain-source avalanche breakdown voltage of more than 200V is needed, then the IXTR36P15P is an ideal solution.The device features a low on-resistance of 8.5 milliohms max, which helps reduce power loss during operation and helps reduce the junction temperature of the device. It also has a drain-source blocking voltage of 200V and a drain current of up to 150A. This makes it suitable for applications such as motor switching, DC-DC converters, and lighting applications. The IXTR36P15P has an internal Schottky diode which is often used as a protection device for high-voltage applications. The Schottky diode serves as a rectifier that blocks currents from flowing back in the opposite direction through the drain-source when power is removed from the circuit. This feature adds protection from transient over-voltage and products that utilize the IXTR36P15P can survive transient over-voltage events and still turn back on with minimal degradation. The device also has a maximum drain-source reverse leakage current of 100 μA, an on-resistance temperature coefficient of -2 mΩ/°C, and a rise time of 15 ns. In terms of function, the IXTR36P15P is a single power MOSFET transistor which utilizes a planar technology. This enables an extremely high charge carrier concentration, which helps reduce the size of the MOSFET. The device is further enhanced by an integrated Schottky diode that is placed between the drain and source of the transistor itself. This Schottky diode helps reduce the junction temperature of the device by making the rectifying process more efficient, thus reducing power losses during operation. Overall, the IXTR36P15P is a power field-effect transistor designed for use in applications such as motor switching, DC-DC converters, and lighting applications, where incorporation of a protection diode would be undesirable. With a drain-source blocking voltage of 200V, a drain current of up to 150A, an internal Schottky diode, and a low on-resistance of 8.5 milliohms, it is one of the most efficient devices in its class and can provide a high level of protection for critical components, making it an ideal choice for a variety of situations.

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