Allicdata Part #: | 1086-16805-ND |
Manufacturer Part#: |
JANTX1N3671AR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 800V 12A DO203AA |
More Detail: | Diode Standard, Reverse Polarity 800V 12A Chassis,... |
DataSheet: | JANTX1N3671AR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/260 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 38A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-203AA (DO-4) |
Operating Temperature - Junction: | -65°C ~ 150°C |
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Diodes are semiconductor devices that only allow current to flow in one direction. Rectifiers are diodes that are particularly useful for converting alternating current (AC) to direct current (DC). A single rectifier, such as the JANTX1N3671AR, is designed to block negative or positive voltages and discharge excess electric potential.
The JANTX1N3671AR is an Axial Lead Silicon Rectifier, with dual-switching capability. It is an Avalanche diode, meaning that it is capable of conducting energy when subjected to a high level of voltage. The JANTX1N3671AR has a maximum repetitive reverse voltage of 500V AC and a peak recurrent peak surge current of 1.2A. The diode is housed in an Axial-Lead DO-34 Package, with dimensions of 4.83 x 3.74 x 5.1mm.
The JANTX1N3671AR\'s wide application field includes power supplies, motor controls, rectification and inverters. The diode was designed with automated assembly in mind and offers strong resistance to both temperature and moisture. Its low thermal resistance permits applications in high temperature and in ambient environments, with an operating temperature of 150°C.
The working principle of the JANTX1N3671AR is simple yet effective. It consists of two layers in alternating p-type and n-type silicon. The layers make up an intrinsic layer, or a layer without doping, which connects the two ends of each layer. During operation, a negative charge is applied to the P-type layer. This causes the electrons to flow from the n-type to the p-type layer. The same process happens with the positive charge when electrons flow from the p-type to the n-type layer. This repetition of the electrons’ flow creates an electronic current.
The JANTX1N3671AR is an excellent choice for designers looking for efficient, durable, and cost-effective single rectifiers. Its robust design and dual-switching capability allow it to be used in a variety of applications. Its temperature and moisture resistance properties make it a viable option for use in industrial and automotive environments. Its Axial-Lead package makes it easy to assemble in automated environments and its wide range of performance parameters ensure its reliability in various applications.
The specific data is subject to PDF, and the above content is for reference
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