JANTX2N6766T1 Allicdata Electronics
Allicdata Part #:

JANTX2N6766T1-ND

Manufacturer Part#:

JANTX2N6766T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH TO-254AA
More Detail: N-Channel 200V 30A (Tc) 4W (Ta), 150W (Tc) Through...
DataSheet: JANTX2N6766T1 datasheetJANTX2N6766T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Series: Military, MIL-PRF-19500/543
Rds On (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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JANTX2N6766T1 is a single, N-channel, enhancement-mode field-effect transistor (MOSFET) suitable for a wide range of applications And industrial applications. It is a high power field-effect transistor (FET) that is capable of sustaining currents in excess of 8A.

Features

  • High power handling capability
  • High-frequency operation up to 5 GHz
  • 3V - 200V gate-source voltage range
  • Low on-resistance with low gate source capacitance
  • Three lead SOT23 package

Application fields

JANTX2N6766T1 is ideal for low-voltage, high-frequency applications such as high-efficiency power management and DC/DC converter applications, Class-D audio amplifiers, LCD backlighting, and motor and gate drive interfaces. It is suitable for space-sensitive applications due to its 3 lead SOT23 package and its high power handling capability.

Working principle

The JANTX2N6766T1 is an N-channel enhancement-mode field-effect transistor (MOSFET). It includes a source terminal, a drain terminal, and a gate terminal, which are all connected to the semiconductor substrate. When a voltage is applied to the gate terminal, this voltage affects the current across the drain and source terminals, which in turn affects how the field-effect transistor operates.

The MOSFET has an insulated gate, which changes its conductivity in response to a voltage applied to the gate terminal. The gate is separated from the substrate by an oxide layer, which is extremely small – hence the name, “metal oxide semiconductor.” When a voltage is applied to the gate, it modulates the conductivity of the channel between the source and drain, allowing more or less charge to flow, depending on the applied voltage.

The JANTX2N6766T1 is an enhancement-mode transistor, meaning that it requires a voltage on the gate terminal to enable current to flow between the source and the drain. When the gate voltage is at 0V, there is no current across the transistor. When a positive voltage is applied to the gate, current can flow, and the higher the voltage applied, the higher the current. This feature is why it is useful in power management applications such as DC/DC converters and LCD backlighting.

The specific data is subject to PDF, and the above content is for reference

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