Allicdata Part #: | JANTX2N6766T1-ND |
Manufacturer Part#: |
JANTX2N6766T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-254AA |
More Detail: | N-Channel 200V 30A (Tc) 4W (Ta), 150W (Tc) Through... |
DataSheet: | JANTX2N6766T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-254-3, TO-254AA (Straight Leads) |
Supplier Device Package: | TO-254AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
Series: | Military, MIL-PRF-19500/543 |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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JANTX2N6766T1 is a single, N-channel, enhancement-mode field-effect transistor (MOSFET) suitable for a wide range of applications And industrial applications. It is a high power field-effect transistor (FET) that is capable of sustaining currents in excess of 8A.
Features
- High power handling capability
- High-frequency operation up to 5 GHz
- 3V - 200V gate-source voltage range
- Low on-resistance with low gate source capacitance
- Three lead SOT23 package
Application fields
JANTX2N6766T1 is ideal for low-voltage, high-frequency applications such as high-efficiency power management and DC/DC converter applications, Class-D audio amplifiers, LCD backlighting, and motor and gate drive interfaces. It is suitable for space-sensitive applications due to its 3 lead SOT23 package and its high power handling capability.
Working principle
The JANTX2N6766T1 is an N-channel enhancement-mode field-effect transistor (MOSFET). It includes a source terminal, a drain terminal, and a gate terminal, which are all connected to the semiconductor substrate. When a voltage is applied to the gate terminal, this voltage affects the current across the drain and source terminals, which in turn affects how the field-effect transistor operates.
The MOSFET has an insulated gate, which changes its conductivity in response to a voltage applied to the gate terminal. The gate is separated from the substrate by an oxide layer, which is extremely small – hence the name, “metal oxide semiconductor.” When a voltage is applied to the gate, it modulates the conductivity of the channel between the source and drain, allowing more or less charge to flow, depending on the applied voltage.
The JANTX2N6766T1 is an enhancement-mode transistor, meaning that it requires a voltage on the gate terminal to enable current to flow between the source and the drain. When the gate voltage is at 0V, there is no current across the transistor. When a positive voltage is applied to the gate, current can flow, and the higher the voltage applied, the higher the current. This feature is why it is useful in power management applications such as DC/DC converters and LCD backlighting.
The specific data is subject to PDF, and the above content is for reference
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