KSD1021GBU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 1V
Power - Max:	350mW
Frequency - Transition:	130MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Short Body
Supplier Device Package:	TO-92S
Base Part Number:	KSD1021

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Introduction

KSD1021GBU is a single NPN silicon planar epitaxial transistor built using integrated junction technology. It has a very low collector-emitter saturation voltage and is especially suitable for high-efficiency power applications. It also has a wide range of applications in various circuits such as amplifier and switch circuits. In this article, we will discuss the application field and working principle of KSD1021GBU transistor.

Application field

KSD1021GBU is primarily used for the amplification and switching of radio frequency (RF) signals. It is particularly useful for applications that require high-efficiency power delivery, such as radio transmitters. It can also be used in amplifiers and power supplies for various types of audio equipment, including receivers, amplifiers, CD players, and other music players.KSD1021GBU is also a great choice for power management applications. Its low saturation voltage makes it ideal for applications such as motor speed controllers, DC-DC converters, and voltage regulators. It is also suitable for use in switching power supplies, buck converters, and other applications that require a low-voltage, high-efficiency power switch.

Working principle

The KSD1021GBU is a bipolar NPN transistor, which means it is made up of two P-type and N-type semiconductor materials. This technology allows the transistor to amplify or switch an electrical signal using a very small amount of energy. The transistor has three terminals: the base, the collector, and the emitter.When the base (B) is given a low voltage (less than 0.6V), the transistor is said to be in a cut-off state. This means that there is no current flowing between the collector and the emitter, and the device is essentially off. However, when a higher voltage is applied to the base, the transistor allows current to flow from the collector to the emitter, which is known as the saturation region. This is where the low saturation voltage of the transistor comes into play. The current flowing through the transistor is heavily regulated by the voltage applied to the base, allowing for precise control of the current flow.

Conclusion

KSD1021GBU is a single NPN silicon planar epitaxial transistor. It has a very low collector-emitter saturation voltage, making it ideal for high-efficiency power applications. Its wide range of applications includes RF signal amplification and switching, power management, motor speed control, voltage regulation, and switching power supplies. The transistor operates by regulating the current flow through its base, collector, and emitter based on the voltage applied to its base.

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