Allicdata Part #: | KSD1021YBU-ND |
Manufacturer Part#: |
KSD1021YBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 1A TO-92S |
More Detail: | Bipolar (BJT) Transistor NPN 30V 1A 130MHz 350mW T... |
DataSheet: | KSD1021YBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 1V |
Power - Max: | 350mW |
Frequency - Transition: | 130MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
Base Part Number: | KSD1021 |
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The KSD1021YBU is a transistor based on bipolar junction technology, classified as a single type of bipolar junction transistor (BJT). It is made up of a three terminal semiconductor device that works by controlling the current flow between two of its terminals based on the current flow or voltage applied to its third terminal. The KSD1021YBU is an NPN (negative positive negative) transistor, meaning that the current flow can be controlled by applying a positive voltage to its base.
The KSD1021YBU is designed as an amplifier, with core applications as a switch, amplifier, or any application requiring a high switching frequency, high breakdown voltage and a high-current gain. It can be used as a saturable switch for switching loads such as relays, inductors, and motors, as well as in integrated circuits for amplification. It offers a high switching frequency with low power consumption, which makes it well-suited for applications such as audio power amplifiers or power supplies where electrical noise can be an issue.
The KSD1021YBU has a maximum current rating of 500mA, with a switching frequency of up to 250kHz. It features a high breakdown voltage of up to 600V, which limits the amount of voltage that can be applied to its collector-emitter junction by providing a very high impedance barrier when the applied voltage exceeds this limit. This protects the transistor against any damage due to excessive voltage. The transistor also features a relatively high current gain of up to 80, meaning that a small current flow through its base is amplified to a large current flow through its collector and emitter.
The KSD1021YBU also offers high temperature stability and a long operating life. This is due to its robust construction and its reliable performance in high-temperature environments. When compared to other BJTs, the KSD1021YBU is a more reliable and efficient alternative. It offers a high frequency efficiency and low temperature coefficient, making it suitable for use in applications such as power supplies, audio power amplifiers, motor controls and others where a large current gain and wide temperature range are required.
The KSD1021YBU is a versatile and reliable transistor that is ideal for use in a wide range of applications such as amplifiers, switches, power supplies, and audio power amplifiers. It offers a high frequency efficiency and high current gain, with low noise and a high breakdown voltage. The reliable performance and long life of the KSD1021YBU make it an ideal choice for use in applications where a reliable and efficient solution is required.
The specific data is subject to PDF, and the above content is for reference
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