Allicdata Part #: | MCH6605-TL-E-ND |
Manufacturer Part#: |
MCH6605-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 50V 0.14A MCPH6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 50V 140mA 800mW Su... |
DataSheet: | MCH6605-TL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 140mA |
Rds On (Max) @ Id, Vgs: | 22 Ohm @ 40mA, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 1.32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6.2pF @ 10V |
Power - Max: | 800mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | 6-MCPH |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MCH6605-TL-E is a MOSFET array which is widely used in a variety of applications and operating processes. This MOSFET array is capable of providing high switching speed, low power consumption, low noise, and improved system performance. It consists of four N-channel MOSFETs and one P-channel MOSFET, with the output leads arranged in a common-source configuration. The main features of this MOSFET array include superior switching characteristics, high ESD protection, low power consumption, and a low On-resistance rating.
The MCH6605-TL-E application field mainly covers many industries, such as telecommunications, automotive, energy, medical and various industrial fields. It is often used in power supply, motor control, DC-DC converters, server system, and home appliance. With the improvement of technology, MCH6605-TL-E can now also be used for wireless communication, logic gates, and other applications.
The working principle of MCH6605-TL-E explained in the following way: When the input voltage is applied, the gate of the MOSFET will be activated, resulting in the current flowing from the drain to the source. When the gate voltage is increased, the channel resistance increases and the drain current is reduced. When the entire array is made up of multiple MOSFETs, the overall drain-source resistance is reduced, and the power dissipated through the array is also reduced. This helps increase the efficiency of the overall circuit.
The use of MCH6605-TL-E requires relevant knowledge of electrical engineering, so the user is recommended to seek professional advice to safely and correctly use the Arrays.
The specific data is subject to PDF, and the above content is for reference
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