MCH6101-TL-E Allicdata Electronics
Allicdata Part #:

MCH6101-TL-EOSTR-ND

Manufacturer Part#:

MCH6101-TL-E

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 15V 1.5A MCPH6
More Detail: Bipolar (BJT) Transistor PNP 15V 1.5A 430MHz 1W Su...
DataSheet: MCH6101-TL-E datasheetMCH6101-TL-E Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06728
6000 +: $ 0.06354
15000 +: $ 0.05793
30000 +: $ 0.05419
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 15mA, 750mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1W
Frequency - Transition: 430MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH
Description

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The MCH6101-TL-E is a transistor, a semiconductor device commonly used in many electronic circuits. It belongs to the category of bipolar junction transistors (BJT) and is a single component. While the specifics of the transistor depend on its model, transistors are typically devices made up of three sections or terminals, with current flows between the sections.

The MCH6101-TL-E transistor is made to be insulated. It has a narrow base width and a wide junction area, allowing it to handle high levels of current and heat. This makes it ideal for a number of applications that require insulated components, such as power amplification and switching. It is also suitable for AC and DC coupling and is offered in various voltage ratings, allowing it to be used in a variety of different circuits and components.

The two main sections or terminals of the MCH6101-TL-E transistor are the emitter and the collector. The emitter area is wider and has a higher concentration of dopant atoms, which allow it to quickly give up electrons. The collector has a wider area and a lower concentration of dopants. This divides the transistor into an NPN or PNP type, with the PNP type having the N-type material as the emitter and the P-type material as the collector.

The base region is the thin layer between the emitter and collector, and it is here where the key feature of the transistor functions. The base region is heavily doped and is the narrowest of all three sections. Such a design allows it to regulate and control the flow of current between the emitter and collector. As the current passes through, it causes the conductivity to fluctuate. This is known as the transistor’s ‘gain’, which is related to the amount of current that can pass through the transistor.

The operation of the MCH6101-TL-E is based on the principle of amplification and switching. In an amplification circuit, the transistor acts as a linear amplifier. This is when the emitter and collector sections are connected to two separate points in a circuit, and the transistor can increase or decrease the difference in voltage across the two points. For switching applications, the transistor acts as an open or closed switch, allowing current to pass through in one direction or completely blocking it from passing in the opposite direction.

The MCH6101-TL-E transistor is an efficient and economical semiconductor device for various applications. It is excellent for power amplification, switching, and AC/DC coupling. It can be used in a wide range of circuits and components, and its insulated design allows it to handle high levels of current and heat. It is also designed to allow it to effectively regulate and control the flow of current, increasing or decreasing the difference in voltage across two different points in a circuit. In this way, the transistor can produce amplification and conduction necessary for a number of electronic applications.

The specific data is subject to PDF, and the above content is for reference

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