Allicdata Part #: | MCH6321-TL-W-ND |
Manufacturer Part#: |
MCH6321-TL-W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 4A MCPH6 |
More Detail: | P-Channel 20V 4A (Ta) 1.5W (Ta) Surface Mount 6-MC... |
DataSheet: | MCH6321-TL-W Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 83 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 375pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-MCPH |
Package / Case: | 6-SMD, Flat Leads |
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MCH6321-TL-W is a single N-channel enhancement mode field-effect transistor (FET) fabricated by MCC. It is constructed with a monolithic double epitaxial silicon structure, enabling low-threshold voltage and low-on-resistance, with low input capacitance and fast switching time. This makes the MCH6321-TL-W an ideal solution for DC-DC converters and power management applications.
The MCH6321-TL-W has excellent characteristics, with a maximum drain-source on resistance at 4.5 milliohms typical and 9.5 milliohms maximum. It supports a wide operating temperature range of -40 to +150°C, with an operating voltage of 10 V and a maximum drain current of 20 A. The on-state resistance temperature characteristics are -2.2%/°C, making it an ideal device for switching power management applications.
To control a MCH6321-TL-W, it is important to understand its working principle. The MCH6321-TL-W operates through the electrostatic force created across the channel of the gate-drain region when a voltage is applied. This electrostatic force determines whether the device is in the "on" or "off" state and is, dependent on the gate-source voltage (VGS) and drain-source voltage (VDS). With VGS greater than the threshold voltage, the electrostatic force allows for current to flow from drain to source. In contrast, when the intention is to shut-off the transistor, VGS is decreased such that the electrostatic force generated is unable to sustain current flow.
Due to its low-threshold voltage and low-on-resistance, the MCH6321-TL-W is an ideal choice for DC-DC converters, as it can effectively reduce power losses. Furthermore, it is also well suited for power management applications due to its excellent on-state resistance temperature characteristics. Thus, the MCH6321-TL-W can be used in high temperature operating environments such as power supplies and automotive electronics.
The MCH6321-TL-W offers countless advantages for power management applications. Its wide operating temperature range and low on-state resistance has made it a popular choice for many engineers and designers. Furthermore, its low input capacitance and fast switching time allows for fast and efficient energy transfers.
In summary, the MCH6321-TL-W is an ideal single N-channel FET for DC-DC converters and power management applications. It offers excellent characteristics, such as low-threshold voltage and low-on-resistance, with a wide operating temperature range and excellent on-state resistance temperature characteristics. It also provides a fast switching time and low input capacitance, enabling efficient power transfers.
The specific data is subject to PDF, and the above content is for reference
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