MCH6321-TL-W Allicdata Electronics
Allicdata Part #:

MCH6321-TL-W-ND

Manufacturer Part#:

MCH6321-TL-W

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 4A MCPH6
More Detail: P-Channel 20V 4A (Ta) 1.5W (Ta) Surface Mount 6-MC...
DataSheet: MCH6321-TL-W datasheetMCH6321-TL-W Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 83 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-MCPH
Package / Case: 6-SMD, Flat Leads
Description

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MCH6321-TL-W is a single N-channel enhancement mode field-effect transistor (FET) fabricated by MCC. It is constructed with a monolithic double epitaxial silicon structure, enabling low-threshold voltage and low-on-resistance, with low input capacitance and fast switching time. This makes the MCH6321-TL-W an ideal solution for DC-DC converters and power management applications.

The MCH6321-TL-W has excellent characteristics, with a maximum drain-source on resistance at 4.5 milliohms typical and 9.5 milliohms maximum. It supports a wide operating temperature range of -40 to +150°C, with an operating voltage of 10 V and a maximum drain current of 20 A. The on-state resistance temperature characteristics are -2.2%/°C, making it an ideal device for switching power management applications.

To control a MCH6321-TL-W, it is important to understand its working principle. The MCH6321-TL-W operates through the electrostatic force created across the channel of the gate-drain region when a voltage is applied. This electrostatic force determines whether the device is in the "on" or "off" state and is, dependent on the gate-source voltage (VGS) and drain-source voltage (VDS). With VGS greater than the threshold voltage, the electrostatic force allows for current to flow from drain to source. In contrast, when the intention is to shut-off the transistor, VGS is decreased such that the electrostatic force generated is unable to sustain current flow.

Due to its low-threshold voltage and low-on-resistance, the MCH6321-TL-W is an ideal choice for DC-DC converters, as it can effectively reduce power losses. Furthermore, it is also well suited for power management applications due to its excellent on-state resistance temperature characteristics. Thus, the MCH6321-TL-W can be used in high temperature operating environments such as power supplies and automotive electronics.

The MCH6321-TL-W offers countless advantages for power management applications. Its wide operating temperature range and low on-state resistance has made it a popular choice for many engineers and designers. Furthermore, its low input capacitance and fast switching time allows for fast and efficient energy transfers.

In summary, the MCH6321-TL-W is an ideal single N-channel FET for DC-DC converters and power management applications. It offers excellent characteristics, such as low-threshold voltage and low-on-resistance, with a wide operating temperature range and excellent on-state resistance temperature characteristics. It also provides a fast switching time and low input capacitance, enabling efficient power transfers.

The specific data is subject to PDF, and the above content is for reference

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