MCH6541-TL-E Allicdata Electronics
Allicdata Part #:

MCH6541-TL-EOSTR-ND

Manufacturer Part#:

MCH6541-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN/PNP 30V 0.7A 6MCPH
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 30V 700mA ...
DataSheet: MCH6541-TL-E datasheetMCH6541-TL-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA / 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V / 200 @ 10mA, 2V
Power - Max: 550mW
Frequency - Transition: 540MHZ, 520MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH
Description

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The MCH6541-TL-E is part of the bipolar junction transistor (BJT) array family of transistors. It is a three-terminal NPN device, designed for switching and amplifying signals applications. This device has an on-chip current mirror, which can provide an amplification gain of up to 40dB.

The MCH6541-TL-E consists of four NPN transistors connected in parallel, for high current gain and low voltage drop. The MCH6541-TL-E has a low external noise figure and is able to provide up to 40dB gain with a single supply. The device also has a low internal power dissipation, making it suitable for battery powered applications.

The device also features built-in protection against thermal runaway and negative transients. This provides a higher level of durability and helps to reduce device failures in the long run. The device is also designed to be used in applications where high reliability is required.

The MCH6541-TL-E is primarily used in wireless communication applications, such as satellite systems, where low noise transmission and amplification are essential. The device can also be used in optical communication systems, where low noise and high gain are required. Additionally, it can be used in audio amplifier stages and other low power signal processing applications.

In terms of its working principle, the MCH6541-TL-E is based on the principle of NPN transistor current gain. The device is designed to receive an input signal and amplify it by controlling the current gain of each transistor. When the input signal is amplified, it is then sent to the output stage for further amplification.

The MCH6541-TL-E is also designed with an on-chip current mirror, which controls the current gain of each transistor. This is done by controlling the voltage applied to the bases of the input transistors. This allows the device to provide an almost unlimited range of gains, depending on the external conditions. This makes the MCH6541-TL-E suitable for a wide range of applications.

The device is also designed with a low power dissipation, making it suitable for battery powered applications. Additionally, the device is designed to be able to withstand temperatures ranging from -55°C to 150°C. This makes the MCH6541-TL-E suitable for applications in extreme environments.

Overall, the MCH6541-TL-E is a three-terminal NPN device designed for switching and amplifying signals in various applications. It is ideal for applications where high reliability and low noise are required. The device has an on-chip current mirror, which allows for an amplification gain of up to 40dB. It also has a low power dissipation and is able to withstand high temperatures, making it ideal for applications in extreme environments.

The specific data is subject to PDF, and the above content is for reference

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