MCH6321-TL-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Rds On (Max) @ Id, Vgs:	83 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:	--
Gate Charge (Qg) (Max) @ Vgs:	4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	375pF @ 10V
FET Feature:	--
Mounting Type:	Surface Mount
Supplier Device Package:	6-MCPH
Package / Case:	6-SMD, Flat Leads

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The MCH6321-TL-E is a single n-channel enhancement mode MOSFET, or metal-oxide semiconductor field-effect transistor. It is an Advanced Power MOSFET and offers superior switching characteristics and improved reliability compared to ordinary MOSFETs. Its general purpose application is low-side load switch, but it is also specifically designed for use in demanding applications such as lighting, robotics, medical, and automotive.

Application Field

The MCH6321-TL-E is a fully featured power MOSFET and can be used in a variety of applications. In most cases, it is used as a low-side load switch, as it offers superior performance and reliability compared to traditional MOSFETs. It is also used in applications where it is incorporated as an electronic switch or current limiter.The MCH6321-TL-E is also an ideal choice for noise sensitive and higher frequency applications. It is capable of switching up to 30MHZ, enabling it to be used for high speed switching applications. Additionally, it is designed for use in high efficiency applications, as it draws only 1.5mA of static current.

Design Features

The MCH6321-TL-E is designed for high performance and ease of use. It is a fully featured MOSFET and includes the following advanced design features:• It utilizes a single power source, eliminating the need for an external driver.• The on-resistance is optimized for low losses.• It has an insulated package, enabling it to dissipate heat effectively.• It has built-in thermal protection, to prevent damage due to over temperature.• The gate drive characteristics are optimized for fast switching with no Miller Effect.• It is built with a protection diode to protect against reverse voltage.• Its ESD protection is rated at 8 kV.• It features an undervoltage lockout (UVLO) for protection against false on/off signals.

Working Principle

The MCH6321-TL-E works by using a gate voltage to control the current flowing from the source to the drain. When the gate voltage exceeds the threshold voltage, an electron channel will be formed between the source and the drain electrodes, allowing current to flow from the source to the drain. The amount of current flowing through the channel is determined by the gate voltage, which can be increased or decreased depending on the application.The MCH6321-TL-E also utilizes a variety of other technologies to improve performance and reliability. It utilizes TD (trench drain) technology to minimize on-resistance, SE (surface electrode) technology to reduce overall package area, and SEP (substrate electrode patterning) technology to reduce Miller Effect and improve stability.

Conclusion

The MCH6321-TL-E is an advanced power MOSFET that offers superior performance and reliability compared to traditional MOSFETs. It is very easy to use, as it requires only a single power source and a gate voltage. The design features are optimized for high efficiency and fast switching. Additionally, it is designed to not only handle high frequency applications, but also protect itself from damage due to excessive heat and false signals. This makes it an ideal choice for a range of applications, from simple load switches to fast switching systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description