Allicdata Part #: | MCH6336-P-TL-E-ND |
Manufacturer Part#: |
MCH6336-P-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 12V 5A MCPH6 |
More Detail: | MOSFET P-CH 12V 5A MCPH6 |
DataSheet: | MCH6336-P-TL-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-MCPH |
Package / Case: | 6-SMD, Flat Leads |
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The MCH6336-P-TL-E transistor is a single P-channel enhanceMOSFET, manufactured by several companies under various product names. It is a type of field effect transistor (FET) constructed with a semiconductor channel between source and drain contacts, and is used in a broad range of electronic applications where high precision switching is required. This article will provide an overview of the MCH6336-P-TL-E transistor, its application field, and its working principle.
The MCH6336-P-TL-E is a single P-channel, Logic Level Enhancement MOSFET, manufactured by Panasonic and several other manufacturers under various aliases. It has a maximum drain current of 3.6A and a maximum drain-source voltage of -20V. This transistor also has a very low on-resistance of 19mΩ at a gate voltage of -3V. The maximum power dissipation of this transistor is 5W, while the total gate charge is around 16nC. The MCH6336-P-TL-E transistor has a low gate-source capacitance, making it suitable for high-speed logic applications.
The MCH6336-P-TL-E transistor is widely used in consumer electronics and other industries due to its excellent switching characteristics and low on-resistance. This transistor is ideal for high-current load switch applications, where its low on-resistance minimizes power loss. It is also widely used in voltage regulator modules (VRM) of consumer electronics devices, where its low gate capacitance allows for high switching speeds. Additionally, the MCH6336-P-TL-E transistor can be used in power amplifier circuits, as its low on-resistance allows for higher efficiency and lower power loss.
The working principle of the MCH6336-P-TL-E transistor is based on the principle of electron tunneling. The electrons are moved between the source and drain contacts by the application of a voltage between the gate and source contacts. The gate voltage creates an electric field in the channel between the source and drain contacts, and the free electrons in the channel are attracted towards the positive gate and are infused into it. This causes a current to flow between the source and drain when a voltage is applied between them, which is known as channel conduction or channel current.
The MCH6336-P-TL-E transistor is a robust and reliable device which can be used in a variety of electronic applications. Its low on-resistance allows for efficient operation and its low gate capacitance makes it ideal for high-speed switching applications. This transistor is an ideal choice for power amplifier circuits, load switch applications, and voltage regulator modules.
The specific data is subject to PDF, and the above content is for reference
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