MCH6344-TL-W Allicdata Electronics
Allicdata Part #:

MCH6344-TL-WOSTR-ND

Manufacturer Part#:

MCH6344-TL-W

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 2A MCPH6
More Detail: P-Channel 30V 2A (Ta) 800mW (Ta) Surface Mount SC-...
DataSheet: MCH6344-TL-W datasheetMCH6344-TL-W Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
FET Feature: --
Power Dissipation (Max): 800mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-88FL/MCPH6
Package / Case: 6-SMD, Flat Leads
Description

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MCH6344-TL-W, a silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), is a commonly used electronic component for basic to sophisticated electronic designs in industrial and consumer electronic applications. It employs a very reliable junction isolation technique, making it suitable for use in a range of robust applications and environments.

The MCH6344-TL-W is mainly used for switching and amplification applications and is typically found in industrial motors, telecom infrastructure, consumer electronics, high-end audio components, and more. Its wide range of applications is primarily attributed to its excellent capability in producing high current and power, low voltage/high frequency switching, circuit noise control, and high speed operation.

The MCH6344-TL-W can be classified as a N-Channel Enhancement-Mode Vertical DMOS (Double-Diffused MOS) FET. It has a drain source breakdown voltage rating of 30V, a drain source resistance of 13mΩ, a drain-source on-state resistance at 25°C of 2mΩ, and a gate threshold voltage of VGS=5V. In addition, it has a gate-source capacitance rating of 44.7pF and a drain-source capacitance rating of 32.2pF.

The working principle of the MCH6344-TL-W is that when a voltage is applied to the gate terminal, electrons are attracted to the insulator layer which forms the gate region. This causes the resistance between the drain and the source terminals to decrease and allow current flow to take place. Due to these properties, the MCH6344-TL-W is capable of extremely accurate signal control and amplification.

The MCH6344-TL-W is a highly reliable component thanks to its vertical DMOS technology, which uses an extra layer of silicon to protect its gate from environmental damage. This improves its ability to withstand extended periods of operation in extreme temperatures, with a maximum working temperature rating of 175°C. The component also features fast switching speeds, allowing for high efficiency operation in its power switching applications.

The MCH6344-TL-W is especially useful for high current and low voltage applications. Its design allows for lower ON-resistance and low gate charge, resulting in higher current and power handling capabilities compared to other types of transistors. In addition, its high-frequency switching performance and fast switching speeds enables it to work in fast-changing signal environments.

The MCH6344-TL-W is a versatile component, capable of providing reliable operations in a range of applications. Its wide range of features make it ideal for use in high power/current control, circuit noise control, and high-speed switching operations. It is also ideal for use in applications that require a high level of reliability, due to its excellent ability to withstand extreme temperatures and extended periods of operation.

The specific data is subject to PDF, and the above content is for reference

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