Allicdata Part #: | MCH6431-P-TL-H-ND |
Manufacturer Part#: |
MCH6431-P-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 5A MCPH6 |
More Detail: | MOSFET N-CH 30V 5A MCPH6 |
DataSheet: | MCH6431-P-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-MCPH |
Package / Case: | 6-SMD, Flat Leads |
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MCH6431-P-TL-H is a type of Field Effect Transistor (FET) and is part of the single MOSFET family. This type of transistor allows for controlling the movement of electric charge from one part of the device to another using an external electric field. The "field" refers to the region in which the electric charge exists and is caused by the attraction and repulsion of electrons. When the external electric field is changed, the flow of the electric current changes accordingly. This type of transistor is often used in applications that need to switch one voltage or current level to another, including amplifiers and low-noise switching applications.
MCH6431-P-TL-H is a N-channel Field Effect Transistor (NMOS) manufactured with the use of advanced CMOS technology. As a type of MOSFET, this single MOSFET has a wide variety of applications, such as in analog and digital signal processing, audio and video frequencies, computer systems, and any other frequency-specific components or circuitry. This type of MOSFET is also used in integrated circuit systems where a lower noise input is required. It is especially suitable for switching applications, such as in high-speed logic gates, synchronous switch circuits, high-current power switches, and voltage converters.
The primary function of the MCH6431-P-TL-H is to act as a resistance-free optimum power switch in a circuit. This is achieved by controlling the flow of electric current through the FET with a gate voltage. When a sufficient level of gate voltage (VGS) is applied to the MCH6431-P-TL-H, the transistor behaves like a switch, allowing the current to flow from the drain to the source. In other words, a given amount of gate voltage determines the level of current flow through the transistor.
When using MCH6431-P-TL-H, a circuit designer needs to take into account the two parameters that determine its performance: the breakdown voltage (VD) and the gate capacitance (CG). The breakdown voltage is the voltage level at which the drain current rises above the specified level. The gate capacitance is the capacitance between the gate and the source of the MCH6431-P-TL-H and is measured in picofarads. This capacitor is used to control the amount of gate voltage applied to the transistor, which then determines the amount of current that can flow through it.
Apart from its use in amplifiers and low-noise switching applications, the MCH6431-P-TL-H has also been used in power supply circuits and can be used to switch very short high-current pulses. Its small dimensions and light weight make it suitable for space-constrained designs and it can be used in almost any type of circuit, including micro-controllers, micro-processors, and logic gate applications.
In conclusion, MCH6431-P-TL-H is a widely used single MOSFET for controlling the flow of electric current in various applications. Its low breakdown voltage and gate capacitance make it an excellent choice for switching applications such as amplifiers or low-noise applications. It can be used in integrated circuit systems where a lower noise input is needed and its small size and light weight make it a suitable choice for space-constrained designs. With its wide variety of applications, this type of FET is a reliable and versatile component that can be used in all types of electrical and electronic devices.
The specific data is subject to PDF, and the above content is for reference
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