Allicdata Part #: | MCH6336-TL-EOSTR-ND |
Manufacturer Part#: |
MCH6336-TL-E |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | PCH 1.8V DRIVE SERIES |
More Detail: | P-Channel 12V 5A (Ta) 1.5W (Ta) Surface Mount SC-8... |
DataSheet: | MCH6336-TL-E Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.13476 |
Vgs(th) (Max) @ Id: | 1.4V @ 1mA |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | SC-88FL/MCPH6 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 6V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.9nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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MCH6336-TL-E Application Field and Working Principle
MCH6336-TL-E is a high-performance digital P-Channel Metal Oxide Field Effect Transistor (MOSFET). This MOSFET is manufactured by a semiconductor chip manufacturer, which includes a precision array of ultra-low on-resistance, high-speed switching, low-voltage drives, and low-power models. The device is applicable in various industrial, military, and aerospace applications where it can be used for a variety of purposes, such as amplifying, switching, and voltage regulating.
The MCH6336-TL-E\'s working principle is based on the physical phenomenon known as the "P-Channel MOSFET Effect." This phenomenon is based on the voltage applied to a gate, which, in turn, controls the amount of current flowing between the source and drain. When the voltage applied to the source exceeds the gate threshold voltage, current flows from the source to the drain. Conversely, when the voltage applied to the source drops below the gate, current is blocked, i.e., the MOSFET is said to be in a "cut-off" state.
The MCH6336-TL-E is designed to ensure a very low ON-resistance, with the ability to operate at higher voltages, while using very low power consumption. The MCH6336-TL-E also makes use of short channel protection technology, thereby providing over-stress protection. The low ON-resistance, which is up to 0.7V RDS(ON), is also beneficial for high-speed switching, since this allows for almost instantaneous conduction. Furthermore, the MCH6336-TL-E can operate at low and high temperatures without adversely affecting the performance.
The MCH6336-TL-E can be used in numerous applications, some of which include power supplies, motor drives, automotive and home appliances, power tools, and industrial automation systems. The device is also applicable in computing and telecommunications, providing reliable power supply and stable performance. Lastly, the device is also suited for switching power up to 2A, making it perfect for applications that require high levels of power efficiency and reliability.
In summary, the MCH6336-TL-E is a high-performance digital P-Channel MOSFET device, providing features such as precision, low on-resistance, high-speed switching, and low-power consumption. Through short channel protection technology, the device is able to provide over-stress protection, making it suitable for a multitude of industrial, military, and aerospace applications. The device can be used in various contexts, such as power supplies, motor drives, computing, and telecommunications.
The specific data is subject to PDF, and the above content is for reference
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