MCH6336-S-TL-E

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MCH6336-S-TL-E is a transistor which belongs to a family of Field Effect Transistors (FETs) and is also called as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). FETs differ from BJTs because FETs are voltage-controlled field-effect devices rather than current-controlled devices, making them ideal for high-precision, efficient and low power applications.

The MCH6336-S-TL-E is specifically a single type N- Channel enhancement mode MOSFET. This type of MOSFET couples the indium gallium arsenide (InGaAs) epitaxial layer to the Polysilicon drain region. Indium gallium arsenide is an important compound in semiconductor technology as it allows higher current densities in certain applications, but it also presents a lower on-resistance than other similar materials used in FETs.

This transistor features a specified drain current up to 2A; a breakdown voltage of 80V; and an on-state resistance of 0.05 to 0.17 ohms. They also present a reverse transfer capacitance of 20 to 40 pF, and a thermal resistance of 170°C/W.

The MCH6336-S-TL-E can be used in a broad range of applications, such as power switching, load switching, voltage regulation, power amplification, power management, and signal conditioning. Aside from its excellent thermal and electrical characteristics, this transistor also features an extremely low on-state resistance. This allows it to operate as an efficient switch, reducing power loss and heat generation.

This transistor is designed to work on an N-Channel Enhancement Mode. In this mode, an extremely thin gate oxide allows a large portion of the gate voltage to be applied to the channel after its threshold voltage is exceeded. It will conduct current in this mode until the gate voltage is removed. The ability of the MCH6336-S-TL-E to switch between conducting and non-conducting states rapidly makes it well-suited for applications such as high-frequency switching, and pulse shaping.

As the MCH6336-S-TL-E does not require a large gate voltage to enter the enhanced mode and has the ability to operate at very high speeds, it is well-suited for applications such as high-frequency switching, and pulse shaping. The transistor operates at temperatures ranging from -55°C to +150°C and is available in SOT23 and TSDFN-6 packages. It is designed to be compatible with standard electrical components and can be soldered directly to printed circuit boards. The MCH6336-S-TL-E is suitable for use in wide range of applications, and it is highly efficient when used as a switch.

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