MJD31CRLG Allicdata Electronics
Allicdata Part #:

MJD31CRLGOSTR-ND

Manufacturer Part#:

MJD31CRLG

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 3A DPAK
More Detail: Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Su...
DataSheet: MJD31CRLG datasheetMJD31CRLG Datasheet/PDF
Quantity: 1800
1800 +: $ 0.12696
3600 +: $ 0.11576
5400 +: $ 0.10829
12600 +: $ 0.10083
Stock 1800Can Ship Immediately
$ 0.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD31
Description

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A bipolar junction transistor (BJT) is a three-terminal electronic device used to switch between two states. The MJD31CRLG is a type of BJT which is well suited to many applications. This article will discuss the application field and working principle of the MJD31CRLG transistor.

The MJD31CRLG is an NPN (Negative Positron N-type) Power Transistor. It is commonly used as an amplifier, switch, or a current limiter for a wide range of applications including power control, switching, and protection circuits. In addition to its high-voltage and low-noise characteristics, it is also particularly suited for high-speed switching applications due to its fast switching time.

The MJD31CRLG is a reliable and robust device. It has a maximum collector-emitter voltage (VCEO) of 250V which allows it to be used in higher-voltage applications than most other BJTs. It also features a high breakdown voltage, a large current capacity, and excellent switch-on and switch-off speeds.

The MJD31CRLG operates according to the law of energy conservation. Electrons flow from the emitter to the collector terminal, creating a closed loop. The current that flows between the emitter and collector is controlled by the current flowing into the base terminal. By applying different voltages to the base, the current in the collector-emitter region can be changed. This allows the MJD31CRLG transistor to be switched between two states, either amplified or cut off.

The MJD31CRLG bipolar junction transistor is an excellent choice for numerous applications. Its high-voltage, low-noise, and fast switching characteristics make it ideal for power control and protection circuits, as well as for higher speed switching applications. It is also easy to use and its energy-conservation-based operating principle makes it reliable and robust. This makes the MJD31CRLG an excellent choice for both professionals and hobbyists alike.

The specific data is subject to PDF, and the above content is for reference

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