Allicdata Part #: | MJD340-ND |
Manufacturer Part#: |
MJD340 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 300V 0.5A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 300V 500mA 1.56W Sur... |
DataSheet: | MJD340 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 1.56W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD340 |
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Transistors are one of the most versatile and common electrical components used in today\'s electronic circuits. They come in various types, including single-gate, double-gate, and multiple-gate transistors. The MJD340 is a single-gate bipolar junction transistor (BJT) that provides high current density, high-amplitude voltage control, and low-noise operation.
The bipolar transistor is an electronic device that is used to amplify and switch electrical signals. It is made up of two p-type and n-type doped semiconductor materials. The p and n regions are separated by a third region, known as the base region. Electrons and holes flow between the p and n regions through the base region. The flow of electrons and holes causes a voltage drop across the base region, which can be used to control current through the transistor.
The MJD340 transistor is composed of three layers of silicon, which are the base layer, the emitter layers and the collector layers. The base layer is doped with impurities such as boron that allows current to flow. The emitter layers are also doped with impurities such as phosphorous and has a small potential barrier. The collector layers are heavily doped with impurities such as arsenic and has a large potential barrier. The potential barrier of the collector allows the transistor to control current.
The MJD340 has a wide range of applications. It is commonly used in switching and amplifying circuits. Its high current density makes it ideal for power amplifiers and motor drivers. Its low noise operation makes it suitable for signal processing and audio circuits.
The working principle of the MJD340 is based on the physical structure of the transistor. When a small amount of negative voltage is applied to the base of the transistor, a small amount of current flows through the base region. This allows current to flow from the emitter to the collector, creating an amplified current signal. The amount of current that flows between the emitter and collector is determined by the voltage applied to the base.
The MJD340 has several advantages over other types of transistors. It has a high current density, enabling it to handle high power applications where other types of transistors may fail. Additionally, it has a low-noise performance that makes it suitable for audio circuits. Finally, its high-amplitude voltage control allows it to be used in sophisticated signal processing and amplifier circuits.
In conclusion, the MJD340 is a single-gate bipolar junction transistor designed for a wide range of applications. It offers advantages such as high current density, high-amplitude voltage control, and low-noise operation. The working principle of the transistor is based on the application of an electric field across the three layers of silicon that make up the transistor. This allows current to flow from the emitter to the collector resulting in the necessary amplification or switching of the circuit.
The specific data is subject to PDF, and the above content is for reference
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