MJD32CT4-A Discrete Semiconductor Products |
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Allicdata Part #: | 497-10313-2-ND |
Manufacturer Part#: |
MJD32CT4-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS PNP 100V 3A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 100V 3A 15W Surface ... |
DataSheet: | MJD32CT4-A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 15W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD32 |
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The MJD32CT4-A is a type of bipolar junction transistor. It is a single device that is used in a wide variety of applications. The MJD32CT4-A is a PNP device, meaning that it is typically used to connect two transistors together in an electronic circuit. It is most often used in amplifier circuits and in power supplies. The MJD32CT4-A is a high voltage, medium-power transistor. It is commonly used in amplifier circuit designs and for switching applications in harsh environments where reliability and power handling are important considerations.
The MJD32CT4-A has a maximum collector current of 0.2A and a maximum power dissipation of 50W at 25C. It features a low saturation voltage of 0.35V and a high collector-base breakdown voltage of 800V. It is available in both surface mount and through-hole packages. The device has a maximum junction temperature of 175C and is rated for operation at a maximum temperature of 85C.
Due to its high power and voltage ratings, the MJD32CT4-A is commonly used in amplifier circuits, switching circuits, and other high-power applications. It can also be used in automotive, aerospace, and industrial applications. The MJD32CT4-A can operate in either common-emitter or common-collector configurations. It is commonly used in amplifier circuits as a driver, pre-amplifier, or as a voltage regulator.
The MJD32CT4-A is a high power, high voltage bipolar junction transistor. As with other BJTs, the MJD32CT4-A operates by allowing electrons to flow through the base junction when a voltage is applied. This causes the current flow through the collector to be controlled by the current flow through the base, resulting in an amplified output signal. The gain of the device depends on its internal structure and the surrounding circuit components. It is typically used in amplifier or switching circuits where high power and voltage ratings are needed.
The MJD32CT4-A is a single bipolar junction transistor that is used in a wide range of applications. Its high power and voltage ratings make it ideal for use in amplifier circuits and switching applications. The device can be used in either common-emitter or common-collector configurations and has a maximum junction temperature of 175C. The MJD32CT4-A is a reliable and powerful device that is ideal for use in applications requiring high power and high voltage operation.
The specific data is subject to PDF, and the above content is for reference
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