Allicdata Part #: | MJD32CTF_NBDD002-ND |
Manufacturer Part#: |
MJD32CTF_NBDD002 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 3A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 100V 3A 3MHz 1.56W Su... |
DataSheet: | MJD32CTF_NBDD002 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 1.56W |
Frequency - Transition: | 3MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Base Part Number: | MJD32 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MJD32CTF_NBDD002 is a single bipolar (BJT) transistor developed by NBDD Co. Ltd, and is designed to offer both high-current and high-voltage capabilities. The main application areas of the device include high-speed switching, linear amplification, and high-frequency amplification.
The MJD32CTF_NBDD002 is a third-generation BJT device, using a state-of-the-art process technology to ensure excellent performance. It has an optimized process which results in exceptionally low variability, ensuring consistent devices across different production batches. The device comprises a silicon substrate layer and a polysilicon layer, both of which are electrically isolated from each other. On the silicon substrate layer there are two sets of electrical contacts - one for the base (emitter) and one for the collector.
The working principle of the MJD32CTF_NBDD002 is based on the fact that when a voltage potential is applied between the base and the emitter, electrons are injected into the base region, resulting in the creation of a "collector current". This collector current is higher than the collector current of a standard BJT device. Additionally, because of its optimized process, the MJD32CTF_NBDD002 has a lower saturation voltage, meaning that it can operate at higher voltages with a smaller voltage drop across the device.
The device is particularly suited for applications where high current and high voltage capability is required. Examples include audio and video amplifiers, high-speed logic drivers, and high-speed switching applications. It is also particularly suitable for RF applications and can be used as an efficient switch for low-noise oscillator circuits. In all these applications, its optimized process ensures consistently excellent performance across different batches.
Overall, the MJD32CTF_NBDD002 is an ideal solution for applications which require both high current and high voltage capabilities. Its state-of-the-art process technology ensures excellent performance, even across multiple production batches. It is an efficient solution for audio and video amplifiers, high-speed logic drivers, and high-speed switching applications, and is also suitable for use in low-noise oscillator circuits.
The specific data is subject to PDF, and the above content is for reference
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