MJD32CTF_NBDD002 Allicdata Electronics
Allicdata Part #:

MJD32CTF_NBDD002-ND

Manufacturer Part#:

MJD32CTF_NBDD002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 3A DPAK
More Detail: Bipolar (BJT) Transistor PNP 100V 3A 3MHz 1.56W Su...
DataSheet: MJD32CTF_NBDD002 datasheetMJD32CTF_NBDD002 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Base Part Number: MJD32
Description

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MJD32CTF_NBDD002 is a single bipolar (BJT) transistor developed by NBDD Co. Ltd, and is designed to offer both high-current and high-voltage capabilities. The main application areas of the device include high-speed switching, linear amplification, and high-frequency amplification.

The MJD32CTF_NBDD002 is a third-generation BJT device, using a state-of-the-art process technology to ensure excellent performance. It has an optimized process which results in exceptionally low variability, ensuring consistent devices across different production batches. The device comprises a silicon substrate layer and a polysilicon layer, both of which are electrically isolated from each other. On the silicon substrate layer there are two sets of electrical contacts - one for the base (emitter) and one for the collector.

The working principle of the MJD32CTF_NBDD002 is based on the fact that when a voltage potential is applied between the base and the emitter, electrons are injected into the base region, resulting in the creation of a "collector current". This collector current is higher than the collector current of a standard BJT device. Additionally, because of its optimized process, the MJD32CTF_NBDD002 has a lower saturation voltage, meaning that it can operate at higher voltages with a smaller voltage drop across the device.

The device is particularly suited for applications where high current and high voltage capability is required. Examples include audio and video amplifiers, high-speed logic drivers, and high-speed switching applications. It is also particularly suitable for RF applications and can be used as an efficient switch for low-noise oscillator circuits. In all these applications, its optimized process ensures consistently excellent performance across different batches.

Overall, the MJD32CTF_NBDD002 is an ideal solution for applications which require both high current and high voltage capabilities. Its state-of-the-art process technology ensures excellent performance, even across multiple production batches. It is an efficient solution for audio and video amplifiers, high-speed logic drivers, and high-speed switching applications, and is also suitable for use in low-noise oscillator circuits.

The specific data is subject to PDF, and the above content is for reference

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