MMDT2222V-TP

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	150mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563
Base Part Number:	MMDT2222

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MMDT2222V-TP Application Field and Working Principle MMDT2222V-TP is an NPN 2-cell, transistor array manufacturing by Motorola trading as ON Semiconductor. This high-speed bipolar device, featuring high gain and collector current, is suitable for multiple applications. The device offers both a high-speed switching time and a low saturation voltage ideal for use in high-efficiency circuits. Operating CharacteristicsThe MMDT2222V-TP offers a variety of characteristics that make it suitable for multiple applications. It is operating as an NPN transistor array with each cell capable of handling up to 1.4A of collector current. The device has a maximum DC current gain of 800 and a maximum AC current gain of 500 with a continuous collector current of 1.4A. The maximum collector-to-base breakdown voltage is 40V, with a maximum collector-to-emitter voltage of 30V. The device also has high-speed switching capabilities, with an operating frequency up to 1000MHz. Additionally, the device has a low saturation voltage of 0.2V Vce(sat) at a collector current of 1.4A. This device is also RoHS compliant and has a lead-free finish. UsesThe versatile nature of the MMDT2222V-TP makes it suitable for multiple applications. It is often used in power management, audio equipment, telecommunications, and consumer electronics applications. In audio equipment, the device can be used as a driver to deliver cleaner and stronger sound. In the telecommunications industry, the device can be used for analog and digital signal processing, for both single-ended and differential applications. The device’s high-speed switching capability makes it ideal for use in high-speed data transfer or wireless communications, as it is able to quickly respond to changing signal conditions and maintain signal integrity. Additionally, it can be used in consumer electronics, such as in video recording equipment, handheld electronics, and motion sensors. Working PrincipleThe MMDT2222V-TP transistor array consists of two NPN transistors connected in a Darlington configuration. It has four pins: Emitter, Base, Collector, and Base2. The current flow is controlled by the base-emitter junction. The electrons in the N-type material move from the Emitter to the Base when a forward voltage is applied to the base-emitter junction. This causes the current to flow from the Collector to the Emitter and allows for current gain. The Darlington configuration of the device results in an increase in current gain. This allows for the device’s fast switching times, as the base-to-emitter voltage does not need to be applied for a long duration to turn the device on. The collector-to-base breakdown voltage, with collector-to-emitter voltage applied, must be greater than its specified maximum voltage to ensure proper operation of the device. ConclusionThe MMDT2222V-TP is a high-speed NPN transistor array designed for multiple applications in the power management, audio equipment, telecommunications, and consumer electronics industries. It offers high gain, high collector current, low saturation voltage, and high-speed switching. The device is suitable for single-ended and differential applications and is RoHS compliant. The device’s working principle is based on the Darlington configuration with its current flow controlled by the base-emitter junction.

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