MMDT2227-7-F

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V, 60V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	200mW
Frequency - Transition:	300MHz, 200MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363
Base Part Number:	MMDT2227

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The MMDT2227-7-F is a bipolar junction transistor (BJT) array designed for interface and control circuits. It is a low cost, low power, highly reliable device which can be easily integrated into a wide range of applications.The MMDT2227-7-F is an eight transistor array arranged in two rows of four transistors each. Each transistor has an NPN collector, a PNP base, and two leads for controlling the current flow in PNP and NPN directions, respectively. The collector current of each device is limited to 1mA and its maximum collector-emitter voltage is 50V. The device also features a low power dissipation of approximately 0.15W.The MMDT2227-7-F is the best fit for applications requiring a large number of transistors as it requires very less space and power. It is used in applications such as interfaces, hand-held instruments, high-frequency switching circuits, and audio amplifiers. The device can also be used in high-speed logic integrated circuits as its base to emitter drop is reasonably low. This device is designed to operate in both monotonic and complementary logic families. It can be used for transmitting and receiving data in digital form with a low self-biased collector-emitter voltage (Vce) and low dynamic resistance (rd). The device incorporates active base current limiting and on-chip damping to minimize the transient response. The device is also designed to ensure high gain and low noise operation. The working principle of the MMDT2227-7-F is based on the NPN and PNP transistors connected in pairs forming an current mirror circuit. The pairs are used to control the current flow in a forward direction into the NPN and PNP transistors, respectively. The current mirror configuration ensures that the output of the device is in phase with its input. The on-chip base current limiting ensures that the device remains stable when the output current flow is large. The MMDT2227-7-F is a low-power, high-efficiency BJT array ideal for a variety of interface and control applications. It features low power dissipation, better stability, and efficient heat management. The device also features an active base current limiting and on-chip damping features which make it an ideal choice for high-speed logic integrated circuits.

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