MMDT4126-7-F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are one of the most ubiquitous components in modern electronics. Today, both bipolar junction transistors (BJT) and field effect transistors (FET) are available in many forms, sizes, and styles that allow engineers to design circuits in a range of performance and power levels. The particular application field and working principle of the MMDT4126-7-F emitter coupled transistor array is enumerated and described in detail below.

MMDT4126-7-F Application Field

The MMDT4126-7-F is a four-transistor, six-terminal, NPN-PNP transistor array specifically designed for IC power control applications. It is part of a family of ICs known as the \'\'high-speed low-onbreaker\'\' (HSLO) series, which was developed to supply more robust and reliable control circuits for industrial automation, telecommunication, and other power-hungry applications.

This four-transistor array is well suited for use in amplifier and switch circuits as well as time-delay circuits. The wide supply voltage rating—from -50V to +50V—allows the MMDT4126-7-F to be used in a wide range of applications. For example, it can be used in AC and DC motor control circuits, switched power supplies, and pulse width modulation (PWM) circuits.

MMDT4126-7-F Working Principle

The MMDT4126-7-F is designed such that four individual NPN bipolar junction transistors are connected together by two PNP bipolar junction transistors. The two PNP transistors essentially act as a kind of buffer, allowing the four NPN transistors to function as a single unit. The two PNP transistors also serve to protect the device from overvoltage and short-circuit conditions.

In a typical application, the MMDT4126-7-F is used to drive a power transistor, such as an IGBT or a MOSFET. The supply voltage is applied to the emitter terminals (EC1 and EC2) of the PNP transistors, while the input signal is applied to the base terminals (BC1 and BC2) of the NPN transistors. Depending on the magnitude of the input voltage, the NPN transistor will either be in a fully-on or fully-off state, allowing current to flow or not through the power transistor.

Conclusion

The MMDT4126-7-F is an advanced four-transistor, six-terminal, NPN-PNP transistor array designed for IC power control applications. The wide supply voltage rating of -50V to +50V allows the array to be used in a variety of high-speed, low-power applications, such as AC and DC motor control circuits, switched power supplies, and pulse width modulation (PWM) circuits. Furthermore, the use of PNP transistors to protect the device from overvoltage and short-circuit conditions allows the array to be highly reliable and robust.

The specific data is subject to PDF, and the above content is for reference