Allicdata Part #: | MMDT4403-FDITR-ND |
Manufacturer Part#: |
MMDT4403-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2PNP 40V 0.6A SOT363 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 60... |
DataSheet: | MMDT4403-7-F Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | MMDT4403 |
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The MMDT4403-7-F is a bipolar transistor array designed to provide an efficient, cost effective solution to power switching. This device is used in a wide range of applications and is ideal for applications requiring high frequency switching. It features a high maximum current output and low on-state power loss.
The array is composed of two identical, interconnected transistors in which the base terminals are electrically and thermally connected together. This allows for directly connected output current, creating a low-impedance connection that results in fast switching speed and low turn-on losses. Both transistors have a common source. One transistor is connected to the collector and the other to the emitter, with the base connected to their respective collector and emitter.
The characteristic device functioning is based on the principle of a transverse electric field, which creates an electron density static polarization perpendicular to the current flow. In other words, an electric field is generated across the transistor terminals as is a varying current flow. The electric field is used to modulate the active regions\' characteristics, resulting in the release of electrons. These electrons combine with holes, forming the electron-hole pairs that generate power.
In the MMDT4403-7-F transistor array, the collector and emitter terminals are fixed at one end and the base is at the opposite end, allowing the device to be switched rapidly. The device also features high unity gain bandwidth and low thermal resistance, ensuring optimal power dissipation. Additionally, the device has a built-in diode to protect the transistor from rapid reverse voltage changes.
The MMDT4403-7-F is designed to be used in a wide range of applications that require high frequency switching, including switching power supplies, engine starters and automotive ignition systems. It is also ideal for use in applications that require high current output and low power losses, such as battery chargers and uninterruptible power supplies.
In addition to its many features and benefits, the MMDT4403-7-F is also durable and reliable, making it a great choice for a variety of applications. Its design ensures consistent performance in harsh environments, making it an ideal solution for harsh industrial settings.
The MMDT4403-7-F is a reliable and efficient choice for applications requiring high frequency switching, high current output and low on-state power losses. Its efficient design and robust construction make it an ideal solution for a variety of industrial applications.
The specific data is subject to PDF, and the above content is for reference
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