Allicdata Part #: | MMDT3946LP4-7DITR-ND |
Manufacturer Part#: |
MMDT3946LP4-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN/PNP 40V 0.2A 6DFN |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA ... |
DataSheet: | MMDT3946LP4-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 300MHz, 250MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, No Lead |
Supplier Device Package: | DFN1310H4-6 |
Base Part Number: | MMDT3946 |
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The MMDT3946LP4-7 is an array of three medium-power NPN Bipolar Junction Transistors (BJT) manufactured by ON Semiconductor. This device is intended for use as a general purpose small-signal and low-noise amplifier in many automotive and consumer applications. The device is capable of operating over a wide range of temperature and voltage conditions and is intrinsically capable of withstanding a high slew rate without excessive shift in the output voltage.
The MMDT3946LP4-7 features four NPN transistors in a single 5-pin package. Each of these transistors has an ON resistance of 25Ω, a collector-emitter voltage rating of 35V, and a maximum collector current of 1A. The device has an overall group transit time of 11 ns, and a total power dissipation of 1.2 W. All four transistors have access to the same common collector.
The MMDT3946LP4-7 is designed for use in analog circuit design and broadcast equipment. It is also suitable for use in low-frequency applications such as commercial audio, communications, radio and television. Additionally, it is designed for use in power amplifiers, switching applications, and voltage regulators. Its low operating current, low power dissipation and excellent output performance make it an excellent choice for most analog applications.
The working principle of the MMDT3946LP4-7 is based on the operation of the NPN BJT to amplify and switch electrical signals, depending on the bias of an applied voltage. It is an active device whose terminals are the emitter, base, and collector. Current flows from the emitter to the collector through the base and when an appropriate base voltage is applied, it increases the current flow. This current flow then amplifies the voltage. If the voltage goes below the switching threshold, the current flow is reduced and the transistor switches off.
To best use the MMDT3946LP4-7, it should be connected externally to its operating voltage, load, and other components. Additional components such as resistors and capacitors are necessary to provide adequate frequency response and circuit protection. The base voltage should be set to maximize the efficiency of the transistor, usually somewhere between about 0.2 - 0.7 volts. Proper heat sinking should be used to ensure that the MMDT3946LP4-7 does not exceed its maximum power dissipation levels.
The MMDT3946LP4-7 is a great choice for many small-signal and low-noise amplifier applications due to its low operating current, low power consumption, excellent output performance and its ability to withstand a high slew rate. Its wide voltage range and low cost make it an ideal choice for many of today\'s electronics projects.
The specific data is subject to PDF, and the above content is for reference
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MMDT2907V-7 | Diodes Incor... | -- | 1000 | TRANS 2PNP 60V 0.6A SOT56... |
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