MMDT3906-7-F

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	200mW
Frequency - Transition:	250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363
Base Part Number:	MMDT3906

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The MMDT3906-7-F Transistor Arrays are intended for use in a wide variety of applications. The array is composed of two complimentary, NPN and PNP transistors operating with a collector-to-collector voltage of 30V and allows for high speed switching without the need for additional components. The devices have a maximum power dissipation of 250mW and can handle up to 3A of base current.The MMDT3906-7-F transistor arrays are effective for use as switching devices, amplifiers and other current applications, as well as protection circuits. The package size is significantly smaller than comparable products, allowing designers to streamline their product designs while maintaining the same performance level. The two-transistor array is ideal for use in low-voltage applications such as motor control, automotive and industrial control, power supply and energy saving control.The two-transistor array comprises two transistors, one PNP and one NPN, connected in an anti-parallel configuration. This arrangement allows for high-speed switching as the base current of the PNP transistor is shared with the NPN transistor. The devices have a high current rating and can handle up to 3A of base current. The configuration also allows for low switch resistance for lower power dissipation.The MMDT3906-7-F transistors have a low collector-to-emitter voltage rating of 15V. This makes them suitable for use in low voltage applications such as motor control, automotive and industrial control circuits, where the collector-to-emitter voltage across the component typically does not exceed 15V. The devices have a high current rating of 3A and a maximum power dissipation of 250mW, making them well suited for high power applications.The MMDT3906-7-F transistors have a small package size and features a lead frame construction that helps increase their mechanical strength. This small package size makes them ideal for design applications where space is at a premium. The low profile of the lead frame promotes a small device sans any additional components.In addition, the lead frame construction also helps reduce thermal stress, increasing the device\'s maximum allowed temperatures, and improves current flow. This translates into high-speed switching as the current path can optimize the component\'s current handling capabilities. Furthermore, the lead frame construction also helps disipate heat quickly, allowing for better temperature control and prolonged component life.The MMDT3906-7-F transistor arrays are suited for use in automotive and industrial control, power supply and energy saving applications, where their low collector-to-emitter voltage rating makes it possible to use them with sensitive loads. The high current rating of 3A, as well as the special package size, make this component great for tight spaces. Due to the lead frame construction, it is capable of dissipating heat quickly, allowing for better temperature control and prolonged component life. The two transistors in the array sharing a common base current makes it ideal for low voltage applications, as the power dissipation requirement can be reduced significantly.

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