Allicdata Part #: | MMDT4146-FDITR-ND |
Manufacturer Part#: |
MMDT4146-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN/PNP 25V 0.2A SOT363 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 25V 200mA ... |
DataSheet: | MMDT4146-7-F Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 300MHz, 250MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | MMDT4146 |
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The MMDT4146-7-F is a transistor array device with its application field and working principle rooted in the Bipolar Junction Transistor (BJT) technology. As one of the most mature technologies utilized in the field of transistor array devices, BJT technology has long been used for its low cost, good temperature stability, high input impedance and good linearity characteristics, which are ideal for performing a wide range of applications from high speed switching to high-end digital signal processing.
This MMDT4146-7-F transistor array consists of a total of seven PNP transistors, each housed in its own NPN package, which has been designed to provide excellent thermal management and to ensure that each of the transistors are able to run at their optimal level even during intense applications. The transistors are all connected in a common-emitter configuration, where the base-emitter junction of each transistor acts as a switch that is able to amplify small changes in effective input current into larger changes in the output current. This allows transistors arrays like the MMDT4146-7-F to offer a higher level of performance when compared to using a single transistor, with better speed and accuracy in controlling high-level signals.
In addition to its excellent thermal management, the MMDT4146-7-F transistor array also offers several other benefits to the user. Each individual transistor has a built-in "diode connection" that allows the user to attach additional components without having to worry about them breaking/fusing due to high current/voltage. The transistors can also be individually controlled using a wide range of input signals, making them perfect for use in controlling audio levels and filtering frequencies. Finally, the package also includes an ultra-low impedance base-emitter connection, making it ideal for use in high impedance circuits such as RF amplifiers.
The MMDT4146-7-F transistor array is most commonly used in high-speed switching, logic level shifting and level detection applications. Due to its excellent speed and accuracy, it is often the preferred choice for applications that require precise control, such as in the automotive, medical, manufacturing and industrial fields, where accurate and reliable performance is essential. This particular transistor array is also known for its low-noise characteristics, making it ideal for sensitive and noise-sensitive applications such as those encountered in audio and telecoms.
The MMDT4146-7-F transistor array is an excellent choice for a wide range of applications thanks to its low cost, high performance and reliable performance. Its ability to be individually controlled makes it an ideal solution for applications that require precise control and its excellent thermal management ensures that the device will maintain acceptable levels of performance even during intense applications. The MMDT4146-7-F transistor array is a great example of the prowess of modern Bipolar Junction Transistor technology.
The specific data is subject to PDF, and the above content is for reference
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