| Allicdata Part #: | MMDT2907AQ-7-FDITR-ND |
| Manufacturer Part#: |
MMDT2907AQ-7-F |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | TRANS PNP 60V SS SOT363 |
| More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 60... |
| DataSheet: |  MMDT2907AQ-7-F Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | 2 PNP (Dual) |
| Current - Collector (Ic) (Max): | 600mA |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
| Power - Max: | 200mW |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SOT-363 |
Description
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The MMDT2907AQ-7-F is a bipolar junction transistor (BJT) array, and it is mainly used in electronic engineering designs. A BJT array is a set of transistors arranged in a particular order that are used to control the flow of electricity in circuits. The MMDT2907AQ-7-F has seven transistors that are each connected in series due to the arrangement of the dielectric substrate. This type of transistor array has a lower power dissipation and a greater frequency response than a single transistor. In applications, the MMDT2907AQ-7-F can be used to amplify signals, reduce the number of components, and provide a higher degree of signal precision.
The design of the MMDT2907AQ-7-F consists of seven BJTs that are fabricated on a silicon die. Each transistor is connected to the other via a common base connection. This means that the base terminals of all seven transistors are connected together and an input voltage is applied across them. This creates an electrical potential between the collector and the emitter that is higher than the input voltage. This increased potential is responsible for the amplification of the input signal. As the signal travels through the transistors, it is amplified or attenuated at the base terminals of each transistor.
In terms of applications, the MMDT2907AQ-7-F can be used in a variety of electronic systems and circuits. It is often used to power amplifier circuits, signal processing circuits, and digital-to-analogue converter circuits. It is also commonly used as an active element in transimpedance amplifiers, signal switching, and signal routing. The MMDT2907AQ-7-F enables a higher degree of amplification precision and reduces the number of components required for a particular task.
The MMDT2907AQ-7-F is a versatile bipolar junction transistor array with a wide range of application areas. It is commonly used in a variety of electronic systems, such as amplifiers, transimpedance amplifiers, signal switching, signal processing and signal routing. Due to its lower power dissipation and increased frequency response compared to a single transistor, it is also increasingly being used in circuits that require a higher degree of signal precision. By using the MMDT2907AQ-7-F, engineers can reduce the number of components required for a particular task and help to optimize their designs.
The specific data is subject to PDF, and the above content is for reference
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