MMDT5551-7 Allicdata Electronics
Allicdata Part #:

MMDT5551DITR-ND

Manufacturer Part#:

MMDT5551-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2NPN 160V 0.2A SOT363
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 2...
DataSheet: MMDT5551-7 datasheetMMDT5551-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: MMDT5551
Description

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Introduction of MMDT5551-7 Application Field and Working Principle

The MMDT5551-7 is a type of transistor array, which is primarily composed of three bipolar junction transistors (BJTs). It is characterized by low operating current, low noise and low power consumption, making it an ideal choice for many applications. In this paper, we will take a closer look at the application field and working principle of the MMDT5551-7.

Applications of MMDT5551-7

The MMDT5551-7 is mainly used in the fields of signal processing, control systems, and power management. Its low operating current and low noise characteristics allow it to be used in applications such as audio amplifiers, signal conditioners and signal converters. Its low-power consumption also makes it ideal for applications such as battery-powered systems.

In addition to these typical applications, the MMDT5551-7 is also widely used in telecommunications, industrial systems, medical equipment, and automotive electronics. Due to its reliable and efficient performance, this transistor array is an ideal choice for many modern applications that require high speed and low power consumption.

Working Principle of MMDT5551-7

The MMDT5551-7 consists of three BJTs, each with its own collector, base, and emitter. The collector of each transistor is connected to a common power supply, and the base and emitter of each transistor are connected to a common signal. When a signal is applied to the base of one of the transistors, it causes current to flow from the collector to the emitter, and this current is amplified by the other two transistors in the array. This allows for very efficient signal amplification.

In addition to this simple explanation, it is important to understand the detailed working principle of the MMDT5551-7. To understand this, it is important to look at the collector-emitter current vs. input base-emitter voltage (ICE-VBE) curve of the device. The curve can be seen as two regions, with each region having a different response. In the active region of the curve, the current is linearly proportional to the input voltage, and this allows for efficient signal conditioning and amplification. In the saturation region, the current is almost constant and independent of input voltage. This ensures that the current supplied to the load remains constant and reliable.

Conclusion

The MMDT5551-7 is a widely used transistor array, due to its low operating current, low noise, and low power consumption characteristics. It is mainly used in the fields of signal processing, control systems, and power management, but is also used in other applications due to its reliable and efficient performance. The working principle of the MMDT5551-7 is based on its collector-emitter current vs. input base-emitter voltage (ICE-VBE) curve, which enables it to efficiently condition and amplify signals.

The specific data is subject to PDF, and the above content is for reference

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