MMDT4124-7-F Allicdata Electronics
Allicdata Part #:

MMDT4124-FDITR-ND

Manufacturer Part#:

MMDT4124-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2NPN 25V 0.2A SOT363
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 25V 20...
DataSheet: MMDT4124-7-F datasheetMMDT4124-7-F Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: MMDT4124
Description

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The MMDT4124-7-F is a smart discrete transistor array and an excellent example of how bipolar junction transistors (BJTs) can be implemented as a convenient package which provides ease of use, flexibility and cost savings.

The MMDT4124-7-F belongs to the family of discrete bipolar junction transistor (BJT) arrays and is a suitable device for numerous practical applications ranging from small professional projects to high-end industrial requirements.

The MMDT4124-7-F array consists of four n-channel transistors, otherwise known as NPN transistors. It is specified for up to 1A continuous current at 12V and can provide up to 25mA per transistor with a peak voltage of 50V. The array also presents an excellent thermal performance due to its 3-level package which ensures quick heat dissipation.

The main advantage of this device is its ability to work as a constant current source. It uses a constant current input and produces the same output even when all four transistors are engaged in order to ensure uniform current through all devices. This results in considerable power savings and improved reliability compared to similar devices that require individual current regulation for each transistor.

At the operational level, the MMDT4124-7-F can replace multiple single BJT transistors in many applications, eliminating the need for complex wiring, saving space and reducing costs. An example of such an application is an amplifier, where the device is used as a current-controlled voltage source, a simple circuit that requires one NPN array with a current sink and voltage source. The ability of the array to provide a uniform current through all transistors further simplifies the design process.

Besides amplifiers and current-controlled voltage sources, this array can also be used in light drivers, logic gates, power switching circuits and in many other high voltage and current-intensive applications.

The MMDT4124-7-F bipolar junction transistor array offers numerous advantages over similar products, including enhanced thermal performance, improved reliability, cost savings, space savings, and a simple design. This device is an excellent choice for any application requiring four NPN transistors in a compact and reliable package.

The specific data is subject to PDF, and the above content is for reference

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