MMDT2222A-TP Allicdata Electronics
Allicdata Part #:

MMDT2222A-TPTR-ND

Manufacturer Part#:

MMDT2222A-TP

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS 2NPN 40V 0.6A SOT363
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 60...
DataSheet: MMDT2222A-TP datasheetMMDT2222A-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05821
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: MMDT2222A
Description

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The MMDT2222A-TP is a type of bipolar junction transistor array, which is made up of two individual transistors housed in the same package. It has three terminals, the base, collector and emitter, and it is designed to be used in both analog and digital electronics applications that require high performance and reliability. In this article, we will discuss the application field and working principle of the MMDT2222A-TP.

Application Field

The MMDT2222A-TP is commonly used in applications such as, switching and amplification like logic gates, amplifiers, voltage regulators, and drivers. It is the most popular choice for all types of high-speed, high-power applications and low-noise applications. It is also used in linear applications such as phase lock loops and data converters. This transistor is ideal for applications which require minimal power consumption, high speed and low heat dissipation.

Working Principle

The MMDT2222A-TP works in a similar way to the normal bipolar junction transistor. The way it is designed means two transistors are combined in the same package, therefore when current is applied to the base terminal it will cause a voltage drop across the emitter which creates a current flow between the base-collector junction and the emitter-collector junction. This current flow will cause the current at the collector terminal to increase or decrease, depending on the voltage difference between the base and the collector. This transistor array works on the principle of currents being controlled by the base-collector voltage drop.

One of the advantages of the MMDT2222A-TP is that it is able to provide higher gain, higher switching speed and lower power consumption than other types of transistors. It also has a higher output current and faster source and drain of current providing faster response time. Furthermore, the MMDT2222A-TP is able to provide better immunity from transients like power faults or from mechanical vibrations due to its low capacitance and better thermal behaviour.

In conclusion, the MMDT2222A-TP bi-polar junction transistor array is an excellent choice for a wide range of applications. Although its design means that it cannot compete with modern, higher power transistors, it is reliable and easy to use, making it a popular choice for those who are just starting out with electronic components. With its high gain and high switching speed, the MMDT2222A-TP has proven to be an excellent choice for high-speed, high-power and low-noise applications.

The specific data is subject to PDF, and the above content is for reference

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