MMDT4413-7-F

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 1V / 100 @ 150mA, 2V
Power - Max:	200mW
Frequency - Transition:	250MHz, 200MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363
Base Part Number:	MMDT4413

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Introduction

The MMDT4413-7-F is a Transistor – Bipolar (BJT) – Array that is designed for applications such as power management and data and signal processing. The device consists of two silicon-based NPN transistors connected to two individual Collector pins and one Common Emitter pin. The two NPN transistors are connected in the same polarity configuration, that is, each collector is connected to the emitter of the other. This configuration provides a higher level of current gain and improved performance over traditional transistor array designs.

Application Field

The MMDT4413-7-F has a wide range of applications due to its high current gain, low power consumption and multiple pins. This array is ideal for applications in power management and digital signal processing such as:• Voltage Regulation: The MMDT4413-7-F can be used in applications that require steady voltage regulation. This is due to its high current gain which allows for current to be switched quickly and efficiently. This makes it an ideal choice for voltage regulation in computer systems, telecom and industrial power management systems.• Data Processing: The MMDT4413-7-F can be used in data processing applications due to its low power consumption and multiple pins. The array is well suited for applications that require multiple inputs, such as life cycle tests, automated sequence controllers and logic circuits.• Communication: The MMDT4413-7-F is used in communication systems to boost signals and ensure transmission of high-bandwidth wireless signals. This is due to its high current gain, low power consumption and multiple pins. This makes it ideal for applications in high-speed fiber optics, video surveillance and cellular networks.

Working Principle

The MMDT4413-7-F works based on the principle of current amplification. The two NPN transistors are connected in the same polarity configuration, where each collector is connected to the emitter of the other. This configuration provides a higher level of current gain and improved performance over traditional transistor array designs.When a voltage is applied to the base of the transistors, current will flow from the collector to the emitter. This current is then amplified by the transistors and directed out through the collector and emitter pins. The amount of current that is amplified depends on the strength of the input signal and the size and construction of the transistors.

Conclusion

The MMDT4413-7-F is an ideal solution for applications in power management and digital signal processing. This transistor array is characterized by its high current gain, low power consumption and multiple pins, making it a versatile choice for various applications. The array works based on the principle of current amplification, where a voltage is applied to the base of the transistors and the resulting current is amplified by the transistors.

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