MMDT5451-7-F Discrete Semiconductor Products |
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Allicdata Part #: | MMDT5451-FDITR-ND |
Manufacturer Part#: |
MMDT5451-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN/PNP 160V/150V SOT363 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 160V, 150V... |
DataSheet: | MMDT5451-7-F Datasheet/PDF |
Quantity: | 27000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 160V, 150V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V / 60 @ 10mA, 5V |
Power - Max: | 200mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | MMDT5451 |
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The MMDT5451-7-F is a seven-channel array of transistors and an ideal choice for applications where a low-cost, low-noise, high-speed solution is required, such as communication systems, power amplifier design, medical instruments, automotive electronics, and industrial control. This transistor array is part of a family of bipolar junction transistors (BJTs) designed specifically to address the needs of modern audio, telecommunications, automotive, and industrial applications. The MMDT5451-7-F is a seven-channel, simultaneously-enabled array of transistors with a wide range of power capabilities, making it well-suited to a variety of applications and systems.
The MMDT5451-7-F offers a wide bandwidth range and a high level of accuracy. The array offers very low noise figures and high peak power capabilities while also providing excellent parametric matching between channels. The array also features on-chip thermal compensation, allowing the user to control each device separately in order to achieve optimum thermal and performance characteristics.
The MMDT5451-7-F is capable of operating in a variety of conditions, including high temperatures, shock, vibration and other environmental hazards, making it highly reliable in extreme conditions. The device also has a rated operating temperature of -55 to +125°C and a maximum collector-emitter voltage rating of 500V. Additionally, the array offers on-chip ESD protection, ensuring safe operation and long-term reliability of the device.
The working principle of the MMDT5451-7-F is relatively simple. The array consists of seven NPN transistors, each of which is connected in parallel. When the gate voltage is applied, the electrons in the N-type semiconductor material conduction band become excited and move, causing an electric current to flow in the to and fro direction through the collector and emitter. The voltage across the transistor\'s collector and emitter also increases due to the increasing current, which further accelerates the electrons\' movement through the base-collector junction and provokes an increase in current flow. This process is known as electron movement and amplification, and it is the principle upon which the MMDT5451-7-F operates.
The MMDT5451-7-F is well-suited to many applications. Its broad range of power capabilities makes it ideal for audio and telecommunication systems, as well as power amplifiers, medical instruments, automotive electronics and industrial control systems. Additionally, the array\'s low noise and high speed combined with its thermal compensation capabilities allow it to be used in extreme conditions, making it a reliable choice for a variety of applications.
The MMDT5451-7-F is a powerful and reliable seven-channel array of transistors that is ideal for use in a broad range of applications, from audio and telecom to medical and industrial. The array operates on the principle of electron movement and amplification, enabling the device to provide high levels of accuracy and power despite rugged operating conditions.
The specific data is subject to PDF, and the above content is for reference
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MMDT5451-7-F | Diodes Incor... | -- | 27000 | TRANS NPN/PNP 160V/150V S... |
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MMDT2907V-7 | Diodes Incor... | -- | 1000 | TRANS 2PNP 60V 0.6A SOT56... |
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