MT28F008B5VG-8 T TR Allicdata Electronics
Allicdata Part #:

MT28F008B5VG-8TTR-ND

Manufacturer Part#:

MT28F008B5VG-8 T TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8M PARALLEL 40TSOP I
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8) Parallel 80ns ...
DataSheet: MT28F008B5VG-8 T TR datasheetMT28F008B5VG-8 T TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 80ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 40-TSOP I
Base Part Number: MT28F008B5
Description

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Nowadays, a great part of world-wide electronic system design are based on microprocessors and memory chips.MT28F008B5VG-8T TR belongs to a type of memory chip which is manufactured by Micron Technology. It is used for a wide range of industrial and military applications.

MT28F008B5VG-8T TR, as the latest version of Micron Technology\'s three-vendor Flash family, is a 3V high-performance flash memory. It is designed utilizing a 0.25-micron Flash process, and employed an industry-standard pinout configuration with a 5V interface. It also provides support for pipeline read, resolution/erase, and write operation, which enables it to provide fast operation with low access delay.

The MT28F008B5VG-8T TR memory chip is a non-volatile memory device, meaning that it can retain its stored data even when power is turned off. It features a three-vendor 8-bit interface and supports a clock frequency up to 66 MHz, with a Write throughput of 64 KB/s. It also boasts an 8-bit 6-ns access time, 8- megabit density, up to 8,000 write/erase cycles and up to 10 years data retention. This makes it an ideal choice for applications requiring high-speed operation, reliability and storage of data over a long period of time.

The working principle of the MT28F008B5VG-8T TR memory chip is simple. It is made up of two components: the control section and the memory section. The control section is responsible for controlling the data transfer between the memory and the microprocessor. It also processes the commands and check for errors. The memory section consists of a series of cells that store the data that is sent from the control section. The memory cells are arranged in rows and columns, with each cell containing a certain amount of bits, typically 8 or 16. The data is written to or read from the cells using two methods: page or block mode. In page mode, the data is written or read from a single page, while in block mode, multiple pages are written or read from in one go.

In terms of applications, the MT28F008B5VG-8T TR memory chip is widely employed in industrial, automotive and military systems. It can be used for a variety of applications such as data storage, non-volatile storage, nvSRAM, image storage, program flash memory and security code storage. In automotive systems, it is typically used for code storage, and in industrial and military systems, it is used for non-volatile memory, security code storage and image storage.

Overall, the MT28F008B5VG-8T TR memory chip is a high-performance, low-power memory solution. It is a non-volatile memory device, meaning it can store data even when power is removed. It boasts a three-vendor 8-bit interface, a 66 MHz clock frequency, an 8-bit 6-ns access time, a 64 KB/s write throughput, 8-megabit density, up to 8,000 write/erase cycles and up to 10 years data retention. This makes it ideal for a wide range of industrial and military applications where high-speed operation, reliability and long-term storage of data are desired.

The specific data is subject to PDF, and the above content is for reference

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