Allicdata Part #: | MT28EW01GABA1LPC-1SITTR-ND |
Manufacturer Part#: |
MT28EW01GABA1LPC-1SIT TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1G PARALLEL 64LBGA |
More Detail: | FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Par... |
DataSheet: | MT28EW01GABA1LPC-1SIT TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (128M x 8, 64M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 95ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-LBGA (11x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction:
MT28EW01GABA1LPC-1SIT is one kind of non-volatile memory that is able to hold information without external power, and is widely used in various applications such as consumer electronics, telecommunications, automotive and industrial control. Memory technologies such as EEPROM, NAND, NOR, FRAM and DRAM are typically used to store data and program code that are used by the system or application, but most of these technologies have drawbacks such as limited speed, size or power consumption. The MT28EW01GABA1LPC-1SIT provides an ideal replacement for those existing memory technologies.
Application Field and Technology of MT28EW01GABA1LPC-1SIT
The MT28EW01GABA1LPC-1SIT is mainly used in consumer electronics, telecommunications, automotive and industrial control and other fields. This type of memory is especially useful in applications that demand the highest level of performance, such as those that involve large amounts of random access memory (RAM) and those that must store large amounts of data. It is also well suited for applications that require ultra-low power consumption and minimal latency. The MT28EW01GABA1LPC-1SIT is an advanced non-volatile memory that provides higher efficiency and capacity than traditional memory technologies such as EEPROM. It utilizes a Multi-Level Cell (MLC) architecture to enable higher data density, greater endurance and improved write speed.
The MT28EW01GABA1LPC-1SIT is a 64Mb (8MB) electrical erasable programmable read only memory (EEPROM). It provides a versatile and efficient solution for applications that require large amounts of data storage. The MT28EW01GABA1LPC-1SIT is a 2-volt only device that gets its power from a 2.7V to 3.6V supply. The device can operate from a single 3.3V supply, eliminating the need for additional voltage levels. Its low voltage operation also greatly reduces power dissipation, thus making it an ideal choice for power-sensitive applications.
The MT28EW01GABA1LPC-1SIT contains three key technologies: non-volatile read/write, fast random access read/write, and error-checking and correction. The non-volatile read/write functionality allows the device to retain information even when the power is turned off. This is important for applications that require periodic data entry or updating. The fast random access read/write feature provides high-speed operation that is critical for applications such as audio or video streaming. Finally, the error-checking and correction allow for reliable data storage and retrieval.
Working Principle of MT28EW01GABA1LPC-1SIT
The MT28EW01GABA1LPC-1SIT is based on the Multi-Level Cell (MLC) architecture, which allows it to store more data in a given space than traditional memory technologies such as EEPROM. This technology utilizes two bits per cell, which allows it to store larger amounts of data. The MT28EW01GABA1LPC-1SIT is able to read and write data at rates comparable to DRAM and SRAM. The MLC architecture also provides a large number of program/erase cycles, which makes it excellent for applications that require frequent data updates.
The MT28EW01GABA1LPC-1SIT also contains advanced error-checking and correction mechanisms that ensure the reliability and accuracy of data storage and retrieval. This advanced technology, coupled with fast random access read/write and nonvolatile read/write capabilities, provides a total solution that is ideal for embedded applications. The MT28EW01GABA1LPC-1SIT also contains a integrated memory controller, which allows the device to be configured and optimized for specific applications. This memory controller can be further utilized to integrate with other hardware peripherals and system resources.
The MT28EW01GABA1LPC-1SIT is an ideal memory solution for embedded applications that require nonvolatile read/write, fast random access read/write, and error-checking and correction capabilities. Its Multi-Level Cell architecture and integrated memory controller provide additional advantages, such as higher data density, higher endurance, improved write speed, and optimized operation for specific applications. The low voltage operation of the device also makes it a great choice for power-sensitive applications. The MT28EW01GABA1LPC-1SIT provides an efficient, reliable, and cost-effective solution for modern embedded applications.
The specific data is subject to PDF, and the above content is for reference
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