Allicdata Part #: | MT28EW256ABA1LPN-0SITTR-ND |
Manufacturer Part#: |
MT28EW256ABA1LPN-0SIT TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256M PARALLEL 56VFBGA |
More Detail: | FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Pa... |
DataSheet: | MT28EW256ABA1LPN-0SIT TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (32M x 8, 16M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 75ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-VFBGA |
Supplier Device Package: | 56-VFBGA (7x9) |
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MT28EW256ABA1LPN-0SIT is a non-volatile memory, more specifically a Serial Internal Thermal (SIT) Flash. It is manufactured by Micron, a global leader in advanced semiconductor systems for data storage, networking and communications. The device is a 3.3V 56-pin TSOP-II packaged chip with a dense single layer flash memory array. It has a capacity of 32Mbits (4M x 8 or 2M x 16).
The MT28EW256ABA1LPN-0SIT is mainly used in applications that require high speed data read/write access and low power consumption. Typical applications include portable equipment, cellular/telephone equipment, automotive systems, medical systems, industrial automation, computer peripherals and so on.
The MT28EW256ABA1LPN-0SIT memory operates on a single 3.3V supply and is compliant with the JEDEC Standard. Power consumption is very low, with the device consuming only 0.06µA in sleep mode. It has a high write stability and an access time of 45ns. Data retention is an impressive 20 years, with erasure rates of over 10,000 cycles.
The MT28EW256ABA1LPN-0SIT memory works on a simple but effective principle. It uses charge stored on the gate of the transistors - insulated gate field effect transistors (igfets) - to store information. In order to write information, charge must be added or removed from the gate of the igfet. This can be done manually or via a electrical signal sent to the memory. To read information the charge on the gate is sensed and then converted into binary form which can be interpreted by the user.
The MT28EW256ABA1LPN-0SIT memory is an impressive device that is versatile enough for use in many applications. Thanks to its low power consumption, robust design and impressive write stability, it is widely used in many consumer and industrial products.
The specific data is subject to PDF, and the above content is for reference
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MT28F004B3VG-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 TET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 TET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
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MT28F004B5VG-8 TET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 TET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VP-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VP-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F008B3VG-9 B | Micron Techn... | -- | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
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