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MT28EW512ABA1HPC-0AAT application field and working principle

MT28EW512ABA1HPC-0AAT is a device from Micron Technology. It is a stand-alone Nonvolatile Memory (NVM) device that can be used in many different applications. The MT28EW512ABA1HPC-0AAT provides high-density memory with a total size of 512M bytes. It features an advanced multi-level cell (MLC) architecture which allows for high-density memory and fast data write speeds.

Overview

The MT28EW512ABA1HPC-0AAT is a Multi-Level Cell (MLC) NAND Flash memory device with a total size of 512M bytes. It is based on a 64-bit wide bus architecture and consists of 64 planes organized in 8 segments. Each segment contains 8 planes that can be programmed individually or in parallel for quick data write speeds. The device has been designed to provide high performance and high density in a small form factor.

The device has an 8-bit wide address bus and a 16-bit wide data bus. It provides up to 4K bytes of program track address and 4K bytes of read/write block address. The maximum write speed of the device is 14 Gbps, while the maximum read speed can reach 30 Gbps.

Features

The MT28EW512ABA1HPC-0AAT provides several features that make it an ideal choice for many applications. These features include:

• High-density memory – up to 512M bytes
• High-Speed Data Access – up to 30 Gbps read speed
• Multi-level cell (MLC) architecture – offers both high-density and speed
• Wide range of operating temperatures – -20°C to +85°C
• Error Correction Code (ECC) – provides efficient data protection
• Powerful Command Set – supports various flash commands, including write-protect and data rate settings

Applications

The MT28EW512ABA1HPC-0AAT can be used in a wide range of applications, such as:

• Mobile phones, tablets and other portable electronic devices
• Digital audio players
• Digital cameras
• Solid state drives
• USB Flash Drives
• Network equipment
• Car infotainment systems
• Personal digital assistants
• Gaming consoles

Working Principle

The MT28EW512ABA1HPC-0AAT uses an advanced MLC architecture to provide efficient memory storage. In this architecture, each memory cell is divided into two parts, with each part storing one bit of data. This allows for higher density memory and faster data write speeds. The device is programmed using a set of commands known as “Command Set”. These commands are used to define the data rate, write protect settings, and other parameters.

The device uses Error Correction Code (ECC) to provide efficient data protection. ECC is a technique that checks for errors in data after it is written and read from the device. The use of ECC ensures that data is not corrupted or lost. In addition, the device also supports other features such as wear-leveling, dynamic bad block management, and over-provisioning.

Conclusion

The MT28EW512ABA1HPC-0AAT is a high-performance, high-density Nonvolatile Memory device that can be used in a variety of applications. It features an advanced MLC architecture which allows for high-density memory and fast data write speeds. The device also features ECC and several other features that ensure efficient data protection. The device is ideal for use in mobile phones, tablets, digital audio players, digital cameras, solid state drives, USB Flash Drives, network equipment, car infotainment systems, personal digital assistants and gaming consoles.

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