MT28EW512ABA1HPN-0SIT

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Memory is essential to the proper functioning of modern electronics and MT28EW512ABA1HPN-0SIT, a 512Megabit (64Mx8/32Mx16) NAND Flash Memory, is a reliable solution for applications such as buffered writes, embedded systems, and multi-purpose storage solutions. Developed by Macronix, this memory features a high-speed Quad Serial Peripheral Interface (QSPI), high-density packages, pin-compatible upgrades for existing products and low-power operation.

MT28EW512ABA1HPN-0SIT, with a fast access time of 25ns, suits applications such as read/write bufferedFlash designs, low-to-mediumvolume embedded systems, and memory applications that demand very high density Flash. Its package options also include a compact 5 x 6mm, 48-ball VFBGA, ideal for space-constrained applications.

MT28EW512ABA1HPN-0SIT uses Macronix\' innovative 0.14um process technology. This process combines electron beam direct write lithography of contacts with copper interconnect and a high capacitance dielectric layer to enable ultra-high density, low-power Flash solutions. This technology ensures that the MT28EW512ABA1HPN-0SIT achieves a wide operating temperature range, excellent data retention and extended endurance, as well as a low-power operating mode that reduces power consumption by as much as 30 percent.

Applications that use MT28EW512ABA1HPN-0SIT include automotive, digital TV, portable devices, industrial and portable electronics. In addition, this memory can also be used in medical devices, aviation components, and more. With the memory\'s low-power operating modes, embedded designers have the flexibility to save power when necessary and extend the life of the devices.

The internal structure and operation of MT28EW512ABA1HPN-0SIT is quite simple. The device is divided into four independent quadrants. Each quadrant contains 128Mbits of memory, internally divided into 32M bits and 16M bits. Each of the four quadrants has its own row and column address lines and data lines. The device is enabled or disabled by applying or de-asserting the chip enable (CE#) signal. Loading and storing data is accomplished by asserting the write enable (WE#) signal, asserting the read enable (RE#) signal, and then transferring the data to or from the memory. The device also features an integrated internal memory array controller, which provides the necessary control signals.

In summary, the MT28EW512ABA1HPN-0SIT is a reliable, high-density solution for applications that demand fast access times and extended endurance. Its innovative 0.14um process technology provides a wide operating temperature range, excellent data retention, and low-power operating modes. Its package options makes it suitable for space-constrained applications, and its simple internal operation makes it easy to use for embedded designers. Memory designers can rely on Macronix\'s MT28EW512ABA1HPN-0SIT for their embedded designs.

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