MT28EW512ABA1LPN-0SIT TR Allicdata Electronics
Allicdata Part #:

MT28EW512ABA1LPN-0SITTR-ND

Manufacturer Part#:

MT28EW512ABA1LPN-0SIT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M PARALLEL 56VFBGA
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Pa...
DataSheet: MT28EW512ABA1LPN-0SIT TR datasheetMT28EW512ABA1LPN-0SIT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8, 32M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 95ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Supplier Device Package: 56-VFBGA (7x9)
Description

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Memory: MT28EW512ABA1LPN-0SIT TR Application Field and Working Principle

MT28EW512ABA1LPN-0SIT TR is a non-volatile memory product manufactured by Micron Technology and is part of their 28nm SLC NAND Flash family. The device is available in the standard FBGA153(10mm x 15mm) package and comes with a built-in Error Correction Code (ECC) and a timed random-access memory interface which supports end-to-end data protection. The product is designed to provide customers with a reliable, cost-effective solution for their most demanding applications.

MT28EW512ABA1LPN-0SIT TR uses high-density MLC NAND Flash technology to deliver higher density, higher speed and higher endurance when compared to traditional SLC NAND products. With its high-speed read/write capability and built-in ECC, the device is ideal for applications such as Windows and embedded storage, digital media storage, in-vehicle entertainment, industrial automation, and home surveillance.

MT28EW512ABA1LPN-0SIT TR offers an extensive variety of features which make it suitable for use in a wide range of applications. Its advanced program cycle time and improved BCH ECC is optimized for high-speed data transfer and read/write operations, and it also features built-in write protect, strong data protection, and AES-256 security. Additionally, the device is optimized for high-bandwidth operations and is capable of performing up to 400MBps sequential read/write performance.

The working principle of MT28EW512ABA1LPN-0SIT TR is based on two important elements which are applied depending on the application and data being stored. The first element is cycling, which is the process of rewriting the data after a period of time in order to maintain data integrity and the second element is error correction code (ECC). The ECC works by checking the integrity of the data stored in the memory and by correcting any errors if they occur. The combination of cycling and ECC helps to ensure data accuracy and data protection in the device.

MT28EW512ABA1LPN-0SIT TR is ideal for applications which require reliable storage of large amounts of data in a cost-effective form factor. The device is suitable for use in numerous markets, such as automotive, consumer electronics, data storage, industrial automation and medical markets.

In summary, MT28EW512ABA1LPN-0SIT TR is a Flash-based non-volatile memory device which is ideal for applications which require reliable storage of large amounts of data in a cost-effective form factor. It uses advanced MLC NAND Flash technology to deliver higher density, higher speed and higher endurance than traditional SLC NAND products. Additionally, it features built-in ECC, write protection and AES-256 security which help to ensure data accuracy and data protection. Finally, with its advanced program cycle time and improved BCH ECC, it is capable of performing up to 400MBps sequential read/write performance.

The specific data is subject to PDF, and the above content is for reference

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