| Allicdata Part #: | MT47H128M16RT-187E:C-ND |
| Manufacturer Part#: |
MT47H128M16RT-187E:C |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 2G PARALLEL 84FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 53... |
| DataSheet: | MT47H128M16RT-187E:C Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT47H128M16 |
| Supplier Device Package: | 84-FBGA (9x12.5) |
| Package / Case: | 84-TFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 85°C (TC) |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Memory Interface: | Parallel |
| Access Time: | 350ps |
| Series: | -- |
| Clock Frequency: | 533MHz |
| Memory Size: | 2Gb (128M x 16) |
| Technology: | SDRAM - DDR2 |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tray |
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Memory is a crucial component of any electronic system, and regardless of the application field, it is vital for proper and reliable operation. MT47H128M16RT-187E:C is an excellent example of advanced memory which is suitably employed in digital systems. This memory module is most commonly used in computer applications, such as controlling panels, in-vehicle systems, etc. due to its great capacity and compatibility. It is a double data rate synchronous dynamic random access memory (DDR SDRAM) utilizing a 16mb memory and a 512bit wide memory bus. The module operates at a voltage of 2.5V and is fully JEDEC compliant.
The MT47H128M16RT-187E:C has several advantageous features that make it an ideal choice in many application fields. Firstly, the module features a fast access time, enabling the system to retrieve data from memory more quickly and efficiently. Furthermore, its low power consumption ensures the system\'s power efficiency, prolonging the operational lifespan significantly. Additionally, the module is equipped with error correction code (ECC) and cyclic redundancy check (CRC) for data integrity assurance. This feature enables the module to detect and correct errors in the data it stores, thus providing reliable and accurate operation.
The MT47H128M16RT-187E:C utilizes dynamic random access memory (DRAM) technology, which is the most commonly used form of memory in digital systems. The module\'s working principle is based on the storage of data with charge on a microscopic sized capacitor. In order to access the stored information, the memory needs to be “refreshed”, which refreshes the charge in the capacitors. This refreshes, or re-writing, process is referred to as “write cycles” and the memory can be refreshed multiple times, ensuring the integrity and reliability of the stored data.
The MT47H128M16RT-187E:C provides a cost-efficient solution to the need for reliable, fast and efficient memory. This, combined with its high-capacity, reliability and compatibility with many other types of memory, makes it suitable for use in many different application fields. As such, the MT47H128M16RT-187E:C is an excellent choice for any system requiring reliable and efficient memory.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT47H64M16NF-25E:M | Micron Techn... | -- | 24450 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H32M16HR-25E L:G | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47R128M8CF-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8CB-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47R64M16HR-3:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H32M16NF-25E AUT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 400... |
| MT47H128M8CF-25E:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16HR-187E:G | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4CB-37E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8CF-3 L:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8CF-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M16HR-25 IT:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H256M8THN-3 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H64M8SH-25E:H | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H512M4EB-3:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H256M8EB-25E XIT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
| MT47H128M8B7-37E L:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H128M16RT-3:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 84FBG... |
| MT47R256M4CF-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8CB-5E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16B7-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H512M4THN-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R512M4EB-25E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BN-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M16HR-3 AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M8SH-187E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 533... |
| MT47H32M16BN-3 IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8HQ-3:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16NF-25E AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H32M16CC-37E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M8CF-25E IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8CF-25E AIT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8SH-25E IT:M | Micron Techn... | -- | 14557 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HR-3:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16BT-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8B6-37E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H256M4HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H512M4EB-187E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
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MT47H128M16RT-187E:C Datasheet/PDF