| Allicdata Part #: | MT47H128M4CB-37E:B-ND |
| Manufacturer Part#: |
MT47H128M4CB-37E:B |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 512M PARALLEL 60FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 2... |
| DataSheet: | MT47H128M4CB-37E:B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT47H128M4 |
| Supplier Device Package: | 60-FBGA |
| Package / Case: | 60-FBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 85°C (TC) |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Memory Interface: | Parallel |
| Access Time: | 500ps |
| Series: | -- |
| Clock Frequency: | 267MHz |
| Memory Size: | 512Mb (128M x 4) |
| Technology: | SDRAM - DDR2 |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tray |
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Memory is integral to computing. It’s used to store code, data, and various commands. It is also responsible for keeping track of memory operations. In this article, we will discuss the application field and working principle of MT47H128M4CB-37E:B.
MT47H128M4CB-37E:B is a synchronous DRAM module from Micron Technology, Inc. It is a 128MB module built with 8M x 16 memories. It has an 8 bit data bus, 4 banks and a burst length of 4 or 8 (selectable). The module is rated to 333MHz, with a CAS latency of 2, 4 or 5 (selectable), and an access time of 2 clock cycles.
The MT47H128M4CB-37E:B “registered” module is well suited for applications such as high performance computing, data storage and networking. It can be used as the main memory in a board-level system, or as a shared memory in a multi-processing system. The module is also suitable for use in embedded systems such as Routers, Printers and Industrial automation.
The MT47H128M4CB-37E:B synchronous DRAM operates by transferring data between its controller and its memory cells in synchronous mode. The controller is responsible for issuing commands and transferring data from the memory cells. The memory cells are organized in a 2D array. To access data, the controller first sends an address to the array. The array then responds with the data at that address. The operation of the memory cells is controlled by an internal clock, which is connected to the controller. The clock synchronizes the data transfers and reduces power consumption.
In addition to data storage, the MT47H128M4CB-37E:B synchronous DRAM module is also capable of performing error detection and correction. This feature is accomplished by using parity bits, which are added to the data as it is sent to the memory cells. When the data is read back by the controller, the parity bits are used to detect any errors and then correct them if necessary.
The MT47H128M4CB-37E:B synchronous DRAM module is a powerful and reliable memory solution for various applications. It is built for high performance computing, data storage and networking. The module is also capable of performing error detection and correction, which provides higher data reliability. With its rated speed of 333MHz, CAS latency of 2, 4 or 5 and access time of 2 clock cycles, it offers fast and reliable data transfers.
The specific data is subject to PDF, and the above content is for reference
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| MT47H64M16B7-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H512M4THN-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R512M4EB-25E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BN-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M16HR-3 AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
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| MT47H32M16BN-3 IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
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MT47H128M4CB-37E:B Datasheet/PDF