MT47H256M8THN-3 IT:H Allicdata Electronics
Allicdata Part #:

MT47H256M8THN-3IT:H-ND

Manufacturer Part#:

MT47H256M8THN-3 IT:H

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 2G PARALLEL 63FBGA
More Detail: SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 333...
DataSheet: MT47H256M8THN-3 IT:H datasheetMT47H256M8THN-3 IT:H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT47H256M8
Supplier Device Package: 63-FBGA (8x10)
Package / Case: 63-TFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 450ps
Series: --
Clock Frequency: 333MHz
Memory Size: 2Gb (256M x 8)
Technology: SDRAM - DDR2
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory is one of the most important components of any computing device, providing the required storage for raw data, programming instructions and more. The MT47H256M8THN-3IT:H is a type of Dynamic Random Access Memory (DRAM) used in many modern devices. This article will discuss the application field and working principle of this particular type of memory.

Applications

The MT47H256M8THN-3IT:H is a memory chip designed for applications which require fast speeds and high density. It is well-suited for consumer electronics products, such as laptops and tablets, as well as dedicated gaming systems. This type of memory is ideal for applications in which speed is essential; the 8-bit DDR3 data bus speeds and the maximum 1866 MT/s transfer rates are an excellent choice for memory intensive tasks.

In addition, the MT47H256M8THN-3IT:H is used in processes which demand high performance. By harnessing the high bandwidth of this form of memory, processes such as digital imaging, multimedia applications, and graphics intensive tasks can be completed quickly and efficiently. It is also used in applications which require a low power solution, such as in mobile devices.

Working Principle

The MT47H256M8THN-3IT:H is a 4 Gb (512 Meg) Double Data Rate 3 (DDR3) SDRAM. It is created with a design which supports 8 bit data bus widths and has a maximum transfer rate of up to 1866 MT/s. This particular type of DRAM uses a Double Data Rate (DDR) architecture – essentially two data transfers per clock cycle. This enables the memory to run at data transfer rates which are twice the base clock rate, which makes it faster, more efficient, and more reliable than other memory types.

The MT47H256M8THN-3IT:H also features an Advanced High-performance Embedded Memories architecture, referred to as H-Die. This architecture improves system performance and reduces overall power consumption. The memory uses a low-voltage 1.35V operation and 30µA idle current, making it an ideal performance-oriented DRAM solution.

In addition, the MT47H256M8THN-3IT:H utilizes Error Correcting Code (ECC) technology to detect and correct errors which may occur during data transfer and prevent data corruption. ECC is beneficial in mission-critical applications and those with sensitive data, as it helps to ensure data integrity.

Conclusion

The MT47H256M8THN-3IT:H is a highly reliable and efficient memory chip which is well-suited for applications requiring fast data transfer rates and high-density storage. Its applications span from consumer electronics to high-performance data-driven processes, and its advanced features, such as its embedded memories architecture and ECC technology, make it an ideal solution for a variety of projects and requirements.

The specific data is subject to PDF, and the above content is for reference

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