MT47H64M16HR-3:H

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The MT47H64M16HR-3:H is a high-speed, high-performance integrated semiconductor memory designed specifically for low-power applications. It is fabricated using state-of-the-art CMOS technology for high speed operation and low power consumption. This memory is most suitable for high speed data processing and caching applications.This memory is divided into two distinct functional blocks, a cache and a controller. The cache is comprised of high-speed SRAM cells that are used for storing intermediate data during data processing operations. The controller is used to manage the transfer of data between the cache and the system memory. The MT47H64M16HR-3:H is designed to operate with low power consumption and low latency. The cache is split into two halves, one half is used as the data port and the other is used as the address port. This allows the memory to operate faster than a single port cache. Additionally, the cache is arrayed such that multiple accesses do not require the full page to be loaded or written, leading to a decreased access latency. The memory\'s controller is responsible for controlling the transfer of data between the cache and system memory. The controller implements a two-way bus to facilitate efficient data transfer and employs sophisticated data flow control algorithms to reduce power consumption. The controller supports a number of advanced features, including write combining, which enables multiple transfers of data to be batched together for higher efficiency. The MT47H64M16HR-3:H is a highly efficient and reliable memory solution for low-power embedded applications. The combination of high-speed SRAM cells and a sophisticated controller enable the memory to deliver fast performance and low power consumption. The array architecture and advanced data flow control algorithms enable a wide range of applications to benefit from the memory\'s low access latency and low power consumption.

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