MT47H64M8B6-37E IT:D TR Allicdata Electronics
Allicdata Part #:

MT47H64M8B6-37EIT:DTR-ND

Manufacturer Part#:

MT47H64M8B6-37E IT:D TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 512M PARALLEL 60FBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 26...
DataSheet: MT47H64M8B6-37E IT:D TR datasheetMT47H64M8B6-37E IT:D TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT47H64M8
Supplier Device Package: 60-FBGA
Package / Case: 60-FBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 500ps
Series: --
Clock Frequency: 267MHz
Memory Size: 512Mb (64M x 8)
Technology: SDRAM - DDR2
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory: MT47H64M8B6-37E IT:D TR Application Field and Working Principle

The MT47H64M8B6-37E IT:D TR is a dynamic random access memory (DRAM) integrated circuit manufactured by Micron Technology. It is part of the MT47H64M8xx series of DRAMs designed for use in computing, communications and consumer applications. The MT47H64M8B6-37E IT:D TR supports data transfer rates up to 667 megatransfers per second (MT/s) and includes an asynchronous interface compatible with double data rate type two (DDR2). As with most DRAMs, the MT47H64M8B6-37E IT:D TR consists of a collection of memory cells organized into a matrix of rows and columns. Each cell in a DRAM stores one bit in the form of an electric charge; however, unlike other forms of memory, this charge will leak away over time. Thus, DRAMs must periodically be “refreshed” to maintain the data stored in their cells.

At a fundamental level, DRAMs work by harnessing the electrical properties of a capacitor and a transistor. The transistor acts as a switch – when it is “on”, the capacitor can store electric charge and when it is “off”, the charge stored in the capacitor is discharged. By periodically turning the transistor on, the charge stored in the capacitor can be “refreshed” and the data stored in the cell can be maintained. When the MT47H64M8B6-37E IT:D TR stores data, the capacitor charge is monitored by the DRAM’s sensing circuitry. Additionally, the DRAM also includes a decoding circuit for decoding the address of the memory cell being accessed.

The MT47H64M8B6-37E IT:D TR supports a range of data transfer rates and can be used in a variety of systems. It is well suited for use in PCs, servers, laptops, and embedded applications, as well as communications and consumer electronics. For example, the MT47H64M8B6-37E IT:D TR could be used in a laptop or PC to support DDR2 memory modules up to 667 megatransfers per second. Additionally, the device could also be used in embedded systems, such as automotive and industrial applications, where a wide range of data transfer rates and smaller memory size are required. The device is also suited for use in communications and consumer electronics applications that require high speed data transfer and low power consumption.

In conclusion, the MT47H64M8B6-37E IT:D TR is a dynamic random access memory integrated circuit manufactured by Micron Technology. It features an asynchronous interface compatible with double data rate type two, as well as support for data transfer rates up to 667 megatransfers per second. It can be used for PCs, servers, laptops, embedded applications, communications and consumer electronics. It is well suited for applications that require high data transfer rates and low power consumption.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MT47" Included word is 40
Part Number Manufacturer Price Quantity Description
MT47H64M16NF-25E:M Micron Techn... -- 24450 IC DRAM 1G PARALLEL 84FBG...
MT47H32M16HR-25E L:G Micron Techn... -- 1000 IC DRAM 512M PARALLEL 84F...
MT47R128M8CF-3:H Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H64M8CB-5E IT:B Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47R64M16HR-3:H Micron Techn... -- 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H32M16NF-25E AUT:H Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 400...
MT47H128M8CF-25E:H Micron Techn... -- 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H32M16HR-187E:G Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H128M4CB-37E:B Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H128M8CF-3 L:H Micron Techn... -- 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H128M8CF-3:H Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H64M16HR-25 IT:H Micron Techn... -- 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H256M8THN-3 IT:H Micron Techn... 0.0 $ 1000 IC DRAM 2G PARALLEL 63FBG...
MT47H64M8SH-25E:H Micron Techn... -- 1000 IC DRAM 512M PARALLEL 60F...
MT47H512M4EB-3:C Micron Techn... 0.0 $ 1000 IC DRAM 2G PARALLEL 60FBG...
MT47H256M8EB-25E XIT:C Micron Techn... 0.0 $ 1000 IC DRAM 2G PARALLEL 60FBG...
MT47H32M16BT-37E:A TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 92F...
MT47H128M8B7-37E L:A TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 92FBG...
MT47H128M16RT-3:C Micron Techn... -- 1000 IC DRAM 2G PARALLEL 84FBG...
MT47R256M4CF-25E:H Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H64M8CB-5E:B Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H64M16B7-5E:A Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 92FBG...
MT47H512M4THN-3:H Micron Techn... 0.0 $ 1000 IC DRAM 2G PARALLEL 63FBG...
MT47R512M4EB-25E:C Micron Techn... 0.0 $ 1000 IC DRAM 2G PARALLEL 60FBG...
MT47H32M16BN-3:D TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H64M16HR-3 AAT:H Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H64M8SH-187E:H TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 533...
MT47H32M16BN-3 IT:D TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H128M8HQ-3:G TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H32M16NF-25E AAT:H Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H32M16CC-37E:B Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H64M8CF-25E IT:G TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H128M8CF-25E AIT:H TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H128M8SH-25E IT:M Micron Techn... -- 14557 IC DRAM 1G PARALLEL 60FBG...
MT47H64M8B6-3:D TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H64M16HR-3:H Micron Techn... -- 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H64M16BT-5E:A Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 92FBG...
MT47H64M8B6-37E IT:D TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H256M4HQ-3:E TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H512M4EB-187E:C Micron Techn... 0.0 $ 1000 IC DRAM 2G PARALLEL 60FBG...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics