| Allicdata Part #: | MT47H32M16NF-25EAUT:H-ND |
| Manufacturer Part#: |
MT47H32M16NF-25E AUT:H |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 512M PARALLEL 400MHZ |
| More Detail: | SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 4... |
| DataSheet: | MT47H32M16NF-25E AUT:H Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR2 |
| Memory Size: | 512Mb (32M x 16) |
| Clock Frequency: | 400MHz |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 400ps |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Operating Temperature: | -40°C ~ 125°C (TC) |
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Memory chips are responsible for storing digital information. Memory devices take many forms and offer varying levels of functionality. One of the most reliable and powerful memory devices is the MT47H32M16NF-25E AUT:H. This article will discuss the application field and working principle of the MT47H32M16NF-25E AUT:H.
Application Field
The MT47H32M16NF-25E AUT:H is a DDR3 SDRAM device that is mainly used in desktop and server memory applications. It is ideal for applications, such as data storage, web caching and other tasks that require intensive data processing. The device’s features include a 64-bit width and a 1.2 V power supply, with speeds up to 2133 MT/s. This makes it ideal for high-performance applications.
Additionally, the MT47H32M16NF-25E AUT:H has an integrated serial presence detect (SPD) that helps to configure and optimize the device’s initial operation. This feature can reduce system-level integration time as well as the need to continually manage and monitor the system. Moreover, the device also has other operational features, such as write-leveling, per-bit online scrubbing, a thermal sensor and power saving modes.
Working Principle
The working principle of the MT47H32M16NF-25E AUT:H is based on the same concepts as other DDR3 memory devices. However, the device is equipped with some unique features and functions that make it more efficient and reliable than other devices. The first and foremost of these features is its ability to dynamically allocate memory. This feature is possible because of the components on the chip that continuously adjust the allocation of memory. Additionally, the device also has an on-die temperature sensor, which helps to keep the temperature of the chip stable.
The MT47H32M16NF-25E AUT:H also has several other features to support high-performance applications. It has four data channels with fully pipelined read and write operations and has a high-speed 8n prefetch. Additionally, the chip has a low-power self-refresh mode, which helps to preserve the data in the event of a power failure. The device also supports various data transfer speeds of up to 1333 MHz.
On the whole, the MT47H32M16NF-25E AUT:H is a reliable and powerful memory device with a range of advanced features that are perfectly suited for high-performance applications. It is reliable, power-efficient and capable of dynamically allocating memory in order to optimize its performance. Furthermore, the device is equipped with features like an on-die temperature sensor, which makes it ideal for use in unpredictable environments.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| MT47R64M16HR-3:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
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| MT47H256M8THN-3 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H64M8SH-25E:H | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H512M4EB-3:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H256M8EB-25E XIT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
| MT47H128M8B7-37E L:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H128M16RT-3:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 84FBG... |
| MT47R256M4CF-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8CB-5E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16B7-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H512M4THN-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R512M4EB-25E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BN-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M16HR-3 AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M8SH-187E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 533... |
| MT47H32M16BN-3 IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8HQ-3:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16NF-25E AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H32M16CC-37E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M8CF-25E IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8CF-25E AIT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8SH-25E IT:M | Micron Techn... | -- | 14557 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HR-3:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16BT-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8B6-37E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H256M4HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H512M4EB-187E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
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MT47H32M16NF-25E AUT:H Datasheet/PDF