| Allicdata Part #: | MT47H32M16HR-25EL:G-ND |
| Manufacturer Part#: |
MT47H32M16HR-25E L:G |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 512M PARALLEL 84FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 4... |
| DataSheet: | MT47H32M16HR-25E L:G Datasheet/PDF |
| Quantity: | 1000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT47H32M16 |
| Supplier Device Package: | 84-FBGA (8x12.5) |
| Package / Case: | 84-TFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 85°C (TC) |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Memory Interface: | Parallel |
| Access Time: | 400ps |
| Series: | -- |
| Clock Frequency: | 400MHz |
| Memory Size: | 512Mb (32M x 16) |
| Technology: | SDRAM - DDR2 |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tray |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology has come a long way, and has allowed us to store huge amounts of information in a secure and reliable way. The MT47H32M16HR-25E L:G is a memory product designed for high-performance computing and networking applications. It is a dynamic random access memory (DRAM), which is a type of random access memory that stores data on capacitors without the need for refreshing. In this article, we will explain the application field and working principle of the MT47H32M16HR-25E L:G memory.
The MT47H32M16HR-25E L:G memory is a high-performance dynamic random access memory (DRAM). It is designed for systems requiring high throughput for intensive applications such as data analytics, video broadcast, and gaming. It is specified with a maximum clock frequency of 800MHz and a maximum data rate of 25.6 Gbps, and is capable of handling up to 16GB of memory capacity. The MT47H32M16HR-25E L:G memory is available in two form factors – a 240-pin dual in-line memory module (DIMM) and a single in-line memory module (SIMM). The DIMM form factor is the more commonly used form factor.
In terms of its application field, the MT47H32M16HR-25E L:G is specifically designed for a range of applications in the gaming, datacentre, virtualized server, financial services and media production markets. It is designed to provide high bandwidth and capacity for applications such as real-time analysis, streaming media, and high-performance computing. It is especially well-suited for applications where performance requirements must be continually optimised and the need for low latency and high throughput are essential.
The MT47H32M16HR-25E L:G memory is based on the latest DDR4 standard, which uses an 8n prefetch architecture and supports up to 16 banks. The maximum clock frequency is 800MHz and the maximum data rate is 25.6 Gbps. This makes the MT47H32M16HR-25E L:G memory ideal for applications that require higher speeds and data rates. It is also specified to operate at lower supply voltages, which makes it power efficient and suitable for use in battery operated devices.
As with all other forms of memory, the MT47H32M16HR-25E L:G memory works on a simple principle. When a memory request is made, the memory controller selects the requested memory location, reads the stored data, and sends it to the processor. The processor then processes the data, stores the result in the memory, and sends it back to the memory controller. The memory controller then stores the data in the requested memory location and sends an acknowledge signal back to the processor, confirming that the data has been successfully stored.
The MT47H32M16HR-25E L:G memory is a reliable, high-performance memory product for a range of specific applications. It allows for faster access times and higher data rates, and is especially suitable for demanding applications requiring optimised performance. As such, it is a great choice for gaming, datacentre, virtualised server, financial services and media production markets.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT47H64M16NF-25E:M | Micron Techn... | -- | 24450 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H32M16HR-25E L:G | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47R128M8CF-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8CB-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47R64M16HR-3:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H32M16NF-25E AUT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 400... |
| MT47H128M8CF-25E:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16HR-187E:G | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4CB-37E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8CF-3 L:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8CF-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M16HR-25 IT:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H256M8THN-3 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H64M8SH-25E:H | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H512M4EB-3:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H256M8EB-25E XIT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
| MT47H128M8B7-37E L:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H128M16RT-3:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 84FBG... |
| MT47R256M4CF-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8CB-5E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16B7-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H512M4THN-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R512M4EB-25E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BN-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M16HR-3 AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M8SH-187E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 533... |
| MT47H32M16BN-3 IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8HQ-3:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16NF-25E AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H32M16CC-37E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M8CF-25E IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8CF-25E AIT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8SH-25E IT:M | Micron Techn... | -- | 14557 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HR-3:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16BT-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8B6-37E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H256M4HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H512M4EB-187E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
MT47H32M16HR-25E L:G Datasheet/PDF