| Allicdata Part #: | MT47H256M8EB-25EXIT:C-ND |
| Manufacturer Part#: |
MT47H256M8EB-25E XIT:C |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 2G PARALLEL 60FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 400... |
| DataSheet: | MT47H256M8EB-25E XIT:C Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT47H256M8 |
| Supplier Device Package: | 60-FBGA (9x11.5) |
| Package / Case: | 60-TFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 95°C (TC) |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Memory Interface: | Parallel |
| Access Time: | 400ps |
| Series: | -- |
| Clock Frequency: | 400MHz |
| Memory Size: | 2Gb (256M x 8) |
| Technology: | SDRAM - DDR2 |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Active |
| Packaging: | Tray |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a key component of almost all electronic systems. The performance and reliability of a system is largely dictated by the quality of the memory platform. For telecommunications and multimedia systems, the MT47H256M8EB-25E XIT:C memory is an ideal choice, as it provides a variety of benefits in terms of performance and reliability.
The MT47H256M8EB-25E XIT:C is a double data rate type three synchronous dynamic random access memory (DDR3 SDRAM). The memory, which operates at a frequency of 667MHz with a latency of 6, provides huge amounts of data throughput, allowing multimedia systems to operate at full speed without compromising on performance or reliability. Additionally, the MT47H256M8EB-25E XIT:C features ECC (Error Correcting Code) and low power features, which enable the memory to provide consistent, reliable performance.
The MT47H256M8EB-25E XIT:C is used in a variety of applications, including:
- Multimedia systems, including digital televisions and gaming consoles.
- High-performance networking equipment, such as routers and switches.
- Command and control systems for the military and aerospace industries.
- Networked storage systems.
The MT47H256M8EB-25E XIT:C has a number of features that make it well-suited to the applications mentioned above. One of the most important features of the memory is its high data transfer rate. The memory is able to continuously supply data to critical decoders, processors, and algorithms without interruption. This ensures that multimedia applications can operate at full speed without performance or reliability being affected.
Another important feature of the memory is its ability to reduce power consumption. By using advanced techniques such as Partial Array Self Refresh (PASR) and Auto Self Refresh (ASR), the memory module is able to reduce its power consumption while maintaining data integrity. This is an important feature for networking and storage systems, as it allows increased performance while reducing power consumption.
In addition to these features, the MT47H256M8EB-25E XIT:C includes Error Correction Code (ECC) support. This allows the memory to protect itself against data corruption during operation. The ECC support also increases the reliability of the memory, as any errors that occur can be quickly corrected without performance being affected.
Overall, the MT47H256M8EB-25E XIT:C is an ideal choice for a variety of systems, especially multimedia systems, high-end networking equipment, and storage systems. Its high data transfer rate and low power consumption make it well-suited for these applications, and its ECC support ensures that data integrity is maintained. With its wide range of features, the memory is of the highest quality, and can ensure consistent, reliable performance in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MT47R64M16HR-3:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H32M16NF-25E AUT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 400... |
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| MT47H128M8CF-3 L:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8CF-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
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| MT47H256M8THN-3 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H64M8SH-25E:H | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H512M4EB-3:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H256M8EB-25E XIT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
| MT47H128M8B7-37E L:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H128M16RT-3:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 84FBG... |
| MT47R256M4CF-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8CB-5E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16B7-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H512M4THN-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R512M4EB-25E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
| MT47H32M16BN-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M16HR-3 AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M8SH-187E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 533... |
| MT47H32M16BN-3 IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8HQ-3:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16NF-25E AAT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H32M16CC-37E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H64M8CF-25E IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8CF-25E AIT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8SH-25E IT:M | Micron Techn... | -- | 14557 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HR-3:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16BT-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8B6-37E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H256M4HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H512M4EB-187E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
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MT47H256M8EB-25E XIT:C Datasheet/PDF