MT47H64M8CB-5E IT:B

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Memory is an indispensable component in the field of microelectronic engineering and computer science. MT47H64M8CB-5E IT:B is a type of the memory devices, which are specifically designed for high performance applications. This article will focus on the application field and working principle of MT47H64M8CB-5E IT:B.

MT47H64M8CB-5E IT:B is a high-capacity RAM device, mainly used in embedded systems along with microprocessor and digital signal processors. It is a low-power, high-density dynamic random access memory (DRAM) device and has a data access speed of 1.5 nanoseconds. This device is available in different packages like SO-DIMM, DIMM, TSOP, and BGA. It is mainly used to store intermediate data and programs to enable faster data flow in embedded systems.

One of the primary applications of MT47H64M8CB-5E IT:B is in industrial and automotive control systems. This DRAM is used to store large amounts of data from sensors, such as pressure, temperature, and speed, in order to allow rapid feedback and decisions. In addition to this, it is also used in data communication systems, high-definition video cameras and other high-performance imaging products. Furthermore, MT47H64M8CB-5E IT:B is also widely used in automobile navigations and medical devices, such as X-ray machines, IVRs, and MRI scanners.

The working principle of the MT47H64M8CB-5E IT:B is based on the concept of random access memory. In this device, each memory cell has a unique address and can be individually accessed by a single read or write access. The device contains 8K words by 64 bits of storage, and each storage cell can be accessed in 1.5 nanoseconds. The device also has a self-refresh mechanism, which activates the refresh operation automatically, ensuring that the data does not get lost or corrupted.

The MT47H64M8CB-5E IT:B is an advanced type of the RAM device, and it has an extremely low power consumption and an extensive operating temperature range. It has become a widely used memory device for embedded systems, due to its high processing speed and convenience. Furthermore, it is highly reliable and is immune to short circuit and strong electromagnetic interference.

In conclusion, MT47H64M8CB-5E IT:B is a high-density DRAM device and is widely used in industrial and automotive control systems, data communication systems, high-definition video cameras and automobile navigations. It has an access speed of 1.5 nanoseconds and uses a self-refresh mechanism to protect data. Furthermore, it has low power consumption, an extended temperature range and excellent reliability. Therefore, MT47H64M8CB-5E IT:B is an ideal choice for various embedded applications.

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