| Allicdata Part #: | MT47H64M16HR-187E:HTR-ND |
| Manufacturer Part#: |
MT47H64M16HR-187E:H TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 1G PARALLEL 84FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 533... |
| DataSheet: | MT47H64M16HR-187E:H TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT47H64M16 |
| Supplier Device Package: | 84-FBGA (8x12.5) |
| Package / Case: | 84-TFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 85°C (TC) |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Memory Interface: | Parallel |
| Access Time: | 350ps |
| Series: | -- |
| Clock Frequency: | 533MHz |
| Memory Size: | 1Gb (64M x 16) |
| Technology: | SDRAM - DDR2 |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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Memory: MT47H64M16HR-187E:H TR application field and working principle
The MT47H64M16HR-187E:H TR is a type of 1G DDR2 SDRAM consisting of 8 chips of 4Gb components, configured as 128Mx8 and 4 banks. It has a maximum data transfer rate of 800Mb/s, and a maximum power consumption of 180mA. It is designed for use in desktop computers, servers, and storage systems.The MT47H64M16HR-187E:H TR is a type of second-generation (DDR2) double-data rate synchronous dynamic random-access memory. It is a type of synchronous memory, meaning that the data can be read and written while the clock signal is present and the output of the memory is valid. The data is transferred on both the rising and falling edges of the clock cycle, allowing for high data transfer rates. The data is read and stored in memory cells, which are arranged into banks. The MT47H64M16HR-187E:H TR has four banks, meaning that four different pieces of data can be read or written at the same time.When sending a read command to the MT47H64M16HR-187E:H TR, the memory controller sends a signal of the bank, row and column address to the memory subsystem. The memory subsystem decodes these signals, and accesses the desired memory cell. Once the cell is accessed, the data stored in the cell is sent to the memory controller asynchronously. This process is similar to the process used in other types of DDR2 SDRAMs.The MT47H64M16HR-187E:H TR also has a self-refresh mode, which allows the memory to be simultaneously refreshed and accessed. In this mode, the memory is powered down and the eight data I/O lines are used for refreshing the memory. This allows the data to be automatically refreshed and keeps the memory powered on, reducing power consumption and improving system performance.The MT47H64M16HR-187E:H TR also has an Error Correction Code (ECC) feature, which is used to detect and correct errors in the data. This feature is important in ensuring data integrity and accuracy, and is essential in mission-critical applications, such as enterprise servers.The MT47H64M16HR-187E:H TR is highly reliable and is an ideal choice for mission-critical applications, such as enterprise servers, desktops, and storage systems. It is capable of providing high data transfer rates, support for self-refreshing memory, and improved data integrity due to its error correction feature.The specific data is subject to PDF, and the above content is for reference
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MT47H64M16HR-187E:H TR Datasheet/PDF