N25Q008A11EF440F TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	8Mb (1M x 8)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	1.7 V ~ 2 V
Operating Temperature:	-40°C ~ 85°C (TA)
Base Part Number:	N25Q008A11

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N25Q008A11EF440F TR Memory

N25Q008A11EF440F TR is a type of non-volatile semiconductor memory device developed by the semiconductor company Micron Technology that offers an extremely wide range of storage capacities. It is an extremely versatile, cost-effective, and highest performing Flash memory solution up to 1.35 Terabit in a form factor that is both small and rugged. It is commonly used in a range of highly demanding applications where very low power, high reliability, and high endurance are a must.N25Q008A11EF440F TR flash memory is ideal for products that require many non-volatile parameters to be set on production test. These parameters include such things as custom product features and power-on settings. As a universal product, this device can also be used to store programs, data, and configuration settings and is compatible with many different platforms.The N25Q008A11EF440F TR memory line is designed to meet the increasing demands of the industrial, telecom, datacenter, and consumer markets. This high performance, single-package memory device is also designed for increased application flexibility and extremely low power consumption. Furthermore, the write and erase speeds are increased in order to facilitate quicker code download or write operations within a product’s primary operating environment.The N25Q008A11EF440F TR is a flash-based memory technology, which is based on electron tunneling and the storage of electrons on a silicon storage element. This is different to traditional hard drives and other magnetic storage media, which use the flow of electricity and the interaction between two magnetic poles, respectively.In order to access the memory device, the user must first power up the device. This is then followed by the application of a voltage to the silicon element, basically, causing a current to flow. This current then passes through a number of cells, each of which has one electron stored therein. Those cells then store an information bit, either a 0 or a 1, depending upon the voltage and the type of material that is used.The N25Q008A11EF440F TR employs a nonvolatile new type of Flash memory technology, known as 3D NAND. This type of technology allows for increased density and stable performance of the memory device, compared to other memory technologies. In addition, the 3D NAND technology also has a number of advantages over traditional Hard Drives, such as decreased power consumption, higher storage density, and the ability to withstand extreme temperatures.In terms of the memory device\'s endurance, it is capable of 3 billion read/write cycles. Beyond that, the device is also rather resistant to environmental factors, such as shock and vibration, as well as volatile organic compounds. It can also handle temperatures ranging from -40 to +125 ºC, making it a great choice for automotive and industrial applications, as well as data centers and other IoT projects.In terms of its applications, the N25Q008A11EF440F TR memory device is used in a wide variety of applications, from the industrial and automotive to the telecom, datacenter, and consumer markets. This device has been proven to be ideal for applications that require a highly reliable, low-power non-volatile memory solution for storing parameters, programs, data, configuration settings, and more.In conclusion, the N25Q008A11EF440F TR memory device has become a powerhouse in the industrial, telecom, datacenter, and consumer markets due to its reliable, low power consumption, and high endurance. This high performance, single-package memory device is also suitable for a wide range of applications, from industrial and automotive to telecom, datacenter, and consumer.

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